General Semiconductor BCX70K, BCX70J, BCX70G, BCX70H Datasheet
11/10/00
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
BCX70 Series
Small Signal Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Suited for low level, low noise, low frequency
applications in hybrid circuits.
• Low current, low voltage.
• As complementary types, BCX71 Series PNP
transistors are recommended.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Base Voltage V
CBO
45 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
200 mA
Peak Base Current I
B
50 mA
Power Dissipation P
tot
250 mW
Thermal Resistance Junct ion to Ambient Air R
ΘJA
500
(1)
°C/W
Junction Temperature T
j
150 °C
Storage Temper ature Range T
S
–65 to +150 °C
Note: (1) Mounted on FR-4 printed-circuit board.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking BCX70G = AG
Code: BCX70H = AH
BCX70J = AJ
BCX70K = AK
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
New Product
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
Electrical Characteristics(T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
BCX70G V
CE =
5 V, IC= 10 µA———
BCX70H V
CE =
5 V, IC= 10 µA30 — —
BCX70J V
CE =
5 V, IC= 10 µA40 — —
BCX70K V
CE =
5 V, IC= 10 µA 100 — —
BCX70G V
CE =
5 V, IC= 2 mA 120 — 220
DC Current Gain
BCX70H
h
FE
V
CE =
5 V, IC= 2 mA 180 — 310
—
BCX70J V
CE =
5 V, IC= 2 mA 250 — 460
BCX70K V
CE =
5 V, IC= 2 mA 380 — 630
BCX70G V
CE =
1 V, IC= 50 mA 50 — —
BCX70H V
CE =
1 V, IC= 50 mA 70 — —
BCX70J V
CE =
1 V, IC= 50 mA 90 — —
BCX70K V
CE =
1 V, IC= 50 mA 100 — —
Collector-Emitter Saturation Voltage V
CEsat
IC= 10 mA, IB= 0.25 mA 50 — 350
mV
IC= 50 mA, IB= 1.25 mA 100 — 550
Base-Emitter Saturation Voltage V
BEsat
IC= 10 mA, IB= 0.25 mA 600 — 850
mV
IC= 50 mA, IB= 1.25 mA 700 — 1050
V
CE
= 5 V, IC= 2 mA 550 650 750
Base-Emitter Voltage V
BE
VCE= 5 V, IC= 10 µA — 520 — mV
VCE= 1 V, IC= 50 mA — 780 —
V
CB
= 45 V, VBE= 0 V — — 20 nA
Collector Cut-off Current I
CBO
V
CB
= 45 V, V
BE
= 0 V
——20µA
TA= 150°C
Emitter Cut-off Current I
EBO
VEB= 4 V, IC= 0 — — 20 nA
Gain-Bandwidth Product f
T
VCE= 5 V, IC= 10 mA
100 250 — MHz
f = 100 MHz
Collector-Base Capacitance C
CBOVCB
=10 V, f=1 MHz,IE= 0 — 2.5 — pF
Emitter-Base Capacitance C
EBOVEB
= 0.5 V, f= 1 MHz,IC= 0—8—pF
V
CE
=5V, IC= 200 µA,
Noise Figure F R
S
=2 kΩ, f =1 kHz, — 2 6 dB
B = 200 Hz
BCX70G — 200
Small Signal Current Gain
BCX70H
h
fe
VCE= 5 V, IC= 2 mA, — 260
BCX70J f = 1.0 kHZ — 330
BCX70K — 520
Turn-on Time at R
L
= 990Ω (see fig. 1) t
on
V
CC
= 10 V, IC= 10 mA,
— 85 150 ns
I
B(on) = -IB(off)
= 1 mA
Turn-off Time at R
L
= 990Ω (see fig. 1) t
off
V
CC
= 10 V, IC= 10 mA,
— 480 800 ns
I
B(on) = -IB(off)
= 1 mA
BCX70 Series
Small Signal Transistor (NPN)
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