General Semiconductor BC817-25, BC817-40, BC818-40, BC818-25, BC818-16 Datasheet
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BC817, BC818
Small Signal Transistors (NPN)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95).037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Pin configur ation
1 = Base, 2 = Emitter, 3 = Collector.
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
.045 (1.15)
FEATURES
NPN Silicon Epitaxial Planar Transistors
♦
for switching, AF driver and amplifier
applications.
♦
Especially suit ed for automatic inser tion
in thick- and thin-film circuits.
♦
These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.
♦
As complementary types, the PNP transistors BC807
and BC808 are recommended.
.037 (0.95)
SOT-23 Plastic Package
Case:
Weight:
Marking code
Type Marking
BC817-16
BC818-16
MECHANICAL DATA
approx. 0.008 g
-25
-40
-25
-40
6A
6B
6C
6E
6F
6G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
Collector-Em itt er Voltage BC817
Collector-Em itt er Voltage BC817
Emitter-Base Voltage V
Collector Curre nt I
Peak Coll ect or Current I
Peak Bas e Current I
Peak Emitt er Current –I
Power Dissipation at T
Junction Temperature T
Storage Temperature Range T
1)
Device on fiberglass substrate, see layout
ambient temperature unless otherwise specified
25 °C
= 50 °C P
SB
BC818
BC818
Symbol Value Unit
V
V
V
V
CES
CES
CEO
CEO
EBO
C
CM
BM
tot
j
S
EM
50
30
45
25
5V
800 mA
1000 mA
200 mA
1000 mA
1)
310
150 °C
– 65 to +150 °C
V
V
V
V
mW
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
DC Current Gain
at V
= 1 V, IC = 100 mA
CE
Current Gain Group-16
= 1 V, IC = 300 mA -16
at V
CE
Thermal Resistance Junction Substrate
Backside
BC817 THRU BC818
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
-25
-40
-25
-40
h
h
h
h
h
h
R
FE
FE
FE
FE
FE
FE
thSB
100
160
250
60
100
170
– – 320
–
–
–
–
–
–
250
400
600
–
–
–
–
–
–
–
–
–
1)
K/W
Thermal Resistance Junction to Ambient Air R
Collector Saturation Voltage
at I
= 500 mA, IB = 50 mA
C
Base-Emitter Voltage
= 1 V, IC = 300 mA
at V
CE
Collector-Emi tter Cutoff Current
= 45 V BC817
at V
CE
at V
= 25 V BC818
CE
at V
= 25 V, Tj = 150 °C
CE
Emitter-Base Cutoff Current
= 4 V
at V
EB
Gain-Bandwidth Product
= 5 V, IC = 10 mA, f = 50 MHz
at V
CE
Collector-Base Capacitance
= 10 V, f = 1 MHz
at V
CB
1)
Device on fiberglass substr ate, see lay out
V
CEsat
V
BE
I
CES
I
CES
I
CES
I
EBO
f
T
C
thJA
CBO
– – 450
1)
K/W
––0.7V
––1.2V
–
–
–
–
–
–
100
100
5
nA
nA
µ
A
– – 100 nA
– 100 – MHz
–12 pF
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.59 (15 )
.47 (12)
Layout for R
.03 (0.8)
0.2 (5)
.06 (1.5)
.20 (5.1)
thJA
.08 ( 2)
Dimensions in inches (millimeters)
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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