General Semiconductor BB745S Datasheet
BB745S
Tuner Diodes
SOD-323
.012 (0.3)
Cathode Mark
.079 (2.0)
.063 (1.6)
.106 (2.7)
.091 (2.3)
.059 (1.5)
.043 (1.1)
Dimensions in inches and (millimeters)
Top View
max. .004 (0.1)
max. .049 (1.25)
min. .010 (0.25)
FEATURES
Silicon epitaxial planar diodes with very
♦
wide effective capacitance variation for
tuning the wholw renge of UHF television
bands.
♦
These BB745S tuner diodes are ava ilab l e
as singles or as matched sets of more units
according to the tracking conditi on described
in the table of characteristics.
max. .006 (0.15)
SOD-323 Plastic Package
Case:
Weight:
MECHANICAL DATA
approx. 0.004 g
Ratings at
Reverse Voltage V
Ambient Temperat ure T
Storage Temperature Range T
ambient temperature unless otherwise specified
25 °C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol Value Unit
R
amb
S
32 V
125 °C
–55 to +125 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BB745S
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage
at I
= 100 µA
R
Leakage Current
= 30 V
at V
R
V
(BR)R
I
R
32––V
––10nA
Capacitance, f = 1 MHz
at V
= 28 V
R
= 1 V
at V
R
Effective Capacitance Ratio, f = 1 MHz
= 1 to 28 V
at V
R
Series Resistance
at f = 470 MHz, C
= 14 pF
tot
Series Inductance L
C
C
C
C
tot
tot
r
s
S
tot
tot
(1 V)
(28V)
1.8
18.5
–
–
2.2
21.5
pF
pF
9.0 – 11.0 –
–0.65–
Ω
–2.5–nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the re verse bias
voltage of V
= 0.5 to 28 V is max. 2.5%
R
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