General Semiconductor BAW76, BAW75 Datasheet
Maximum Ratings and Thermal Characteristics (T
A
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Reverse Voltage
BAW75
V
R
25
V
BAW76 50
Peak Reverse Voltage
BAW75
V
RM
35
V
BAW76 75
Rectified Current (Average)
Half Wave Rectification with Resistive Load I
O
150
(1)
mA
at TA= 25°C and f ≥ 50 Hz
Surge Forward Current at t < 1µs, Tj= 25°C I
FSM
2A
Power Dissipation at TA= 25°C P
tot
500
(1)
mW
Thermal Resistance Junction to Ambient Air R
ΘJA
0.35
(1)
°C/W
Junction Temperature T
j
200 °C
Storage Temperature Range T
S
–65 to +200 °C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
B AW75 and B AW76
Small-Signal Diodes
5/2/00
Features
• Silicon Epitaxial Planar Diodes
• Fast switching diodes.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
New Product
DO-204AH (DO-35 Glass)
Dimensions in inches and (millimeters)
Electrical Characteristics (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Forward Voltage
BAW75
V
F
at IF= 30mA — — 1
V
BAW76 at IF = 100mA — — 1
BAW75 V
R
= 25V — — 100 nA
Leakage Current
BAW75
I
R
VR = 25V, Tj= 150°C — — 100 µA
BAW76 V
R
= 50V — — 100 nA
BAW76 VR = 50V, Tj= 150°C — — 100 µA
Reverse Breakdown Voltage
BAW75
V
(BR)R
tested with 5µA pulses
35 — —
V
BAW76 75 — —
Capacitance
BAW75
C
tot
VF= VR= 0V
—— 4
pF
BAW76 — — 2
I
F
= 10mA, IR = 10mA
—— 4
Reverse Recovery Time t
rr
I
rr
= 1mA
ns
I
F
= 10mA, IR = 1mA
—— 2
VR=6V,RL=100Ω
B AW75 and B AW76
Small-Signal Diodes
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