General Semiconductor BAV21WS, BAV19WS, BAV20WS Datasheet
BAV19WS THRU BAV21WS
SMALL SIGNAL DIODES
FEATURES
♦ Silicon Epitaxial Planar Diodes
♦ For general purpose
♦ These diodes are also available in other case styles
including: the DO-35 case with the type designations
BAV19 to BAV21, the Mini-MELF case with the type
designations BAV100 to BAV103, the SOT-23 case with
the type designation BAS19 - BAS21 and the SOD-123
case with the type designation BAV19W-BAV21W.
MECHANICAL DATA
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: BAV19WS=A8
BAV20WS=A81
BAV21WS=A82
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS VALUE UNITS
Continuous Reverse Voltage BAV19WS V
R
100 Volts
BAV20WS V
R
150 Volts
BAV21WS V
R
200 Volts
Repetitive Peak Reverse Voltage BAV19WS V
RRM
120 Volts
BAV20WS V
RRM
200 Volts
BAV21WS V
RRM
250 Volts
Forward DC Current at T
amb
= 25 °C I
F
250
1)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load I
o
200
1)
mA
at T
amb
= 25 °C and f ≥ 50 Hz
Repetitive Peak Forward Current
at f ≥ 50 Hz, Θ = 180 °, T
amb
= 25 °C
I
FRM
625
1)
mA
Surge Forward Current at t < 1 s, Tj = 25 °C I
FSM
1 Amps
Power Dissipation at T
amb
= 25 °C P
tot
200
1)
mW
Junction Temperature T
j
150
1)
°C
Storage Temperature Range T
S
–65 to + 150
1)
°C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
SOD-323
Dimensions are in inches and (millimeters)
12/11/98
NEW PRODUCT NEW PRODUCT NEW PRODUCT
.012 (0.3)
Cathode Mark
Top View
.100 (2.55)
.112 (2.85)
.076 (1.95)
.065 (1.65)
.059 (1.5)
.043 (1.1)
max. .00 4 (0.1)
max. .049 (1.25)
min. .010 (0.25)
max. .006 (0.15)
BAV19WS THRU BAV21WS
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL MIN. TYP. MAX. UNIT
Forward voltage at IF= 100 mA V
F
– – 1.00 Volts
at IF= 200mA V
F
– – 1.25 Volts
Leakage Current
at VR= 100 V BAV19WS I
R
– – 100 nA
at V
R
= 100 V, Tj= 100 °C BAV19WS I
R
– – 15.0 µA
at V
R
= 150 V BAV20WS I
R
– – 100 nA
at V
R
= 150 V, Tj= 100 °C BAV20WS I
R
– – 15.0 µA
at V
R
= 200 V BAV21WS I
R
– – 100 nA
at VR= 200 V, Tj= 100 °C BAV21WS I
R
– – 15.0 µA
Dynamic Forward Resistance
at IF= 10 mA
r
f
–5–Ω
Capacitance
at VR= 0, f = 1 MHz
C
tot
– 1.5 – pF
Reverse Recovery Time
from I
F
= 30 mA through IR= 30 mA to t
rr
– – 50 ns
IR = 3 mA; RL= 100Ω
Thermal Resistance
Junction to Ambient Air
R
thJA
– – 650
1)
K/W
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
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