General Semiconductor BAV21, BAV20, BAV19 Datasheet

BAV19 THRU BAV21
Small Signal Diodes
Ratings at
max.
Cathode Mark
max.
.079 (2.0)
.020 (0.52)
min. 1.083 (27.5)
max. .150 (3.8)
min. 1.083 (27.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
Silicon Epitaxial Planar Diodes
For gener al purpose
♦ ♦
These diodes are also available in other case styles including: the SOD-123 case with the type designation BA V19W - B AV21W, the MiniMELF case with the type designation BAV101 - BAV103, and the SOT-23 case with the type designation BAS19 - BAS21.
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
Symbol Value Unit
Reverse Voltage
Forward DC Current at T
amb
Rectified Current (Average)
= 25 °C I
BA V19 BA V20 BA V21
V
R
V
R
V
R
F
I
0
120 200 250
250
200 Half W ave Rectification with Resist. Load at T
= 25 °C and f
amb
Repetitive Peak Forward Current
50 Hz, Θ = 180 °, T
at f Surge For ward Current at t < 1 s, T Power Dissipation at T Junction Temperature T Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
50 Hz
= 25 °C
amb
= 25 °C I
j
= 25 °C P
amb
I
FRM
FSM
tot
j
S
625
1A
500
175
–65 to +175
V V V
1)
1)
1)
1)
1)
1)
mA mA
mA
mW °C °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BAV19 THRU BAV21
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Forw ard voltage at I
= 100 mA V
F
F
––1
Leakage Current
= 100 V
at V
R
at V
= 100 V, Tj = 100 °C
R
at V
= 150 V
R
at V
= 150 V, Tj = 100 °C
R
at V
= 200 V
R
= 200 V, Tj = 100 °C
at V
R
Dynamic Forward Resistance
= 10 mA
at I
F
Capacitance
= 0, f = 1 MHz
at V
R
Rev erse Recovery Time from I I
= 30 mA through IR = 30 mA to
F
= 3 mA; RL = 100
R
Thermal Resistance
BAV19 BA V19 BAV20 BA V20 BAV21 BA V21
I I I I I I
r
C
t
R
R R R R R R
f
rr
tot
thJA
– – – – – –
– – – – – –
–5–
–1.5–pF
––50ns
375
Junct ion to A mbien t Air
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
100 15 100 15 100 15
1) 2)
V
nA
µ
A
nA
µ
A
nA
µ
A
K/W
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