General Semiconductor BAV103, BAV100, BAV102, BAV101 Datasheet
BAV100 THRU BAV103
Small Signal Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
Silicon Epitaxial Planar Diodes
♦
For genera l purpose
♦
♦
These diodes are also available in other
case styles including: t he DO-35 cas e wi th
.055 (1.4)
∅
.063 (1.6)
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS2 1 .
MECHANICAL DATA
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Reverse Voltage
BA V100
BA V101
BA V102
BA V103
Forward DC Current at T
= 25 °C I
amb
Rectified Current (Average)
Half W ave Rectification with Resist. Load
at T
= 25 °C and f
amb
≥ 50 Hz
Repetitive Peak Forward Current
≥ 50 Hz, Θ = 180 °C, T
at f
Surge For ward Current at t < 1 s, T
Power Dissipation at T
= 25 °C
amb
= 25 °C I
j
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
V
R
V
R
V
R
V
R
F
I
0
I
FRM
FSM
tot
j
S
60
120
200
250
1)
250
1)
200
1)
625
1A
1)
400
175 °C
–65 to +175 °C
V
V
V
V
mA
mA
mA
mW
4/98
Ratings at
BAV100 THRU BAV103
ambient temperature unless otherwise specified
25 °C
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Forw ard voltage at I
= 100 mA V
F
F
Leakage Current
= 50 V
at V
R
at V
= 50 V, Tj = 100 °C
R
at V
= 100 V
R
at V
= 100 V, Tj = 100 °C
R
at V
= 150 V
R
= 150 V, Tj = 100 °C
at V
R
at V
= 200 V
R
at V
= 200 V, Tj = 100 °C
R
Dynamic Forward Resistance
= 10 mA
at I
F
Capacitance
= 0, f = 1 MHz
at V
R
Rev erse Recovery Time
from I
I
= 30 mA through IR = 30 mA to
F
= 3 mA; RL = 100
R
Ω
Thermal Resistance
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
I
I
I
I
I
I
I
I
r
C
t
R
R
R
R
R
R
R
R
R
f
tot
rr
thJA
Junct ion to A mbien t Air
1)
Valid provided that electrodes are kept at ambient temperature.
––1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
15
100
15
100
15
100
15
–5–
V
nA
µ
nA
µ
nA
µ
nA
µ
Ω
A
A
A
A
–1.5–pF
––50ns
––0.3751)K/mW
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