General Semiconductor BAT86 Datasheet
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BAT86
Schottky Diodes
DO-35
∅
max.
Cathode
Mark
max.
.079 (2.0)
∅
.020 (0.52)
min. 1.083 (2 7.5)
max. .150 (3.8)
min. 1.083 (27.5)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
♦
This diode features low turn-on volt-
♦
age. The devices are protected by a PN
junction guard ring against excessive voltage, such as electrostatic discharges.
♦
Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications.
♦
This diode is also available in the Mini-MELF case
with the type designation BAS86.
MECHANICAL DATA
DO-35 Glass Case
Case:
Weight:
approx. 0.13 g
Ratings at
Continuous Reverse Voltage V
Forward Continuous Current at T
Repetitive Forward Current
at tp < 1 s, υ ≤ 0.5, T
Power Dissipation at T
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temperature Range T
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
ambient temperature unless otherwise specified
25 °C
= 25 °C
amb
= 25 °C P
amb
= 25 °C I
amb
Symbol Min. Max. Unit
–50 V
– 200
– 500
– 200
– 125 °C
–65 +125 °C
–65 +150 °C
F
I
FRM
amb
R
tot
j
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1)
1)
1)
mA
mA
mW
5/98
222
BAT86
Ratings at
Forward Voltage
Pulse Test t
at I
at IF = 1 mA
at IF = 10 mA
at I
at IF = 100 mA
Leakage Current
at VR = 25 V
Reverse Breakdown Voltage
tested with 10 µA Pulses
Capacitance
at V
Thermal Resistance
Junction to Ambient Air
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA to IR = 1 mA
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
ambient temperature unless otherwise specified
25 °C
< 300 µs, δ < 2%
p
= 0.1 mA
F
= 30 mA
F
= 1 V, f = 1 MHz
R
Symbol Min. Typ. Max. Unit
V
F
V
F
V
F
V
F
V
F
I
R
V
(BR)R
C
tot
R
thJA
t
rr
–
–
–
–
–
0.200
0.275
0.365
0.460
0.700
–0.20.5µ
50 – – V
––8pF
––3001)K / W
––5ns
ELECTRICAL CHARACTERISTICS
0.300
0.380
0.450
0.600
0.900
V
V
V
V
V
A
223
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