Fujitsu stn1nk60z Service manual

STN1NK60Z,

TO-92 (Ammopak)

SOT-223

D(2,4)

G(1)

S(3)

AM01476v1

STQ1NK60ZR

N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™

Power MOSFETs in SOT-223 and TO-92 packages

Datasheet - production data

Features

Order codes

4

3

2

1

STN1NK60Z

STQ1NK60ZR-AP 3 W

• 100% avalanche tested

V

DSRDS(on)maxID

600 V 15 Ω 0.3 A

• Extremely high dv/dt capability

• Gate charge minimized

• ESD improved capability

• Zener-protected

P

TOT

3.3 W

Figure 1. Internal schematic diagram

Applications

• Switching applications

Description

These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on­resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.

Table 1. Device summary

Order codes Marking Package Packaging

STN1NK60Z 1NK60Z SOT-223 Tape and reel

STQ1NK60ZR-AP 1NK60ZR TO-92 Ammopak

July 2014 DocID9509 Rev 14 1/18

This is information on a product in full production.

www.st.com

Contents STN1NK60Z, STQ1NK60ZR

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 SOT-223, STN1NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.2 TO-92 ammopack, STQ1NK60ZR-AP . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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STN1NK60Z, STQ1NK60ZR Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

I

V
V

DM

P

DS
GS

I

D

I

D

TOT

Drain-source voltag e 600 V
Gate-source voltage ± 30 V
Drain current (continuous) at TC = 25 °C 0.3 A
Drain current (continuous) at TC=100 °C 0.189 A

(1)

Drain current (pulsed) 1.2 A
Total dissipation at TC = 25 °C 3.3 3 W
Derating factor 0.026 0.024 W/°C

ESD

dv/dt

T

T

stg

1. Pulse width limited by safe operating area

2. ISD ≤ 0.3 A, di/dt ≤ 200 A/µs, VDD = 80%V

Human body model
C=100 pF, R=1.5 kΩ

(2)

Peak diode recovery volt ag e slo pe 4.5 V/ns
Operating junction temperature

J

Storage tem pera ture °C

Value

Unit

SOT-223 TO-92

800 V

°C

- 55 to 150

(BR)DSS

T a ble 3. Thermal resistance

Value

Symbol Parameter

SOT-223 TO-92

R

thj-amb

R

thj-lead

1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.

Thermal resistance junction-ambient max 38
Thermal resistance junction-lead max 40 °C/W

T able 4. Avalanche data

(1)

120 °C/W

Symbol Parameter Value Unit

I

AR

E

AS

Avalanche current, repetitive or not repetitive
(pulse width limited by T

j max

)

Single pulse avalanche energy
(starting T

= 25 °C, ID = IAR, V

J

DD

= 50 V)

0.3 A

60 mJ

Unit

DocID9509 Rev 14 3/18

18

Electrical characteristics STN1NK60Z, STQ1NK60ZR

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current

Gate body leakage current
Gate threshold volta ge
Static drain-source

on- resistance

VGS= 0, ID = 1 mA

= 0, V

V

GS

V

= 0, V

GS

T

= 125 °C

C

= 0, V

V

DS

= VGS, ID = 50 µA

V

DS

V

= 10 V , ID = 0.4 A

GS

=600 V

DS

=600 V,

DS

= ± 20 V

GS

600 V

1µA

50 µA

±

10 µA

3 3.75 4.5 V

13 15 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

oss eq

(1)

g

fs

C

C

C

Forward transconductance
Input capacitance

iss

Output capacitance - 17.6 pF

oss

Reverse transfer

rss

capacitance
Equivalent output

(2)

.

capacitance

=15 V, ID = 0.4 A

V

DS

V

= 0, V

GS

DS

f=1 MHz

VGS= 0, V

DS

= 25 V,

= 0 to 480 V

-0.5 S

-94 pF

-2.8 pF

-11 pF

Q
Q
Q

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Total gate charge

g

Gate-source charge - 1 nC

gs

Gate-drain charge - 2.7 nC

gd

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

=480 V, ID = 0.8 A

V

DD

=10 V

V

GS

(see Figure 19)

4/18 DocID9509 R ev 14

-4.96.9nC

when VDS

oss

STN1NK60Z, STQ1NK60ZR Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

V

= 300 V, ID = 0.4 A,

t

Rise time - 5 - ns

r

Turn-of f del ay time - 13 - ns

t

Fall time - 28 - ns

f

DD

= 4.7 Ω, V

R

G

(see Figure 18)

GS

= 10 V

-5.5-ns

T a ble 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current - 0.8 A

(1)

Source-drain current (pulsed) - 2.4 A

(2)

Forward on voltage
Reverse recovery time

rr

Reverse recovery charge - 216 nC

rr

Reverse recovery current - 3.2 A
Reverse recovery time

rr

Reverse recovery charge - 224 nC

rr

Reverse recovery current - 3.2 A

=0, I

V

I

GS

SD

= 0.8 A,

SD

= 0.8 A

di/dt = 100 A/µs,

= 20 V

V

DD

I

= 0.8 A,

SD

di/dt = 100 A/µs,

= 20V, Tj = 150 °C

V

DD

-1.6V

- 135 ns

- 140 ns

Table 9. Gate-source Zener diode

Symbol Parameter Test conditions Min Typ. Max. Unit

V

(BR)GSO

Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V

The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.

DocID9509 Rev 14 5/18

18

Electrical characteristics STN1NK60Z, STQ1NK60ZR

10

-3

10

-2

10

-1

10

0

10

1

t

p

(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Zthj-pcb=K*Rthj-pcb,
Rthj-pcb=62.5°C/W

Single pulse

δ=0.5

10

2

t < 30s

SOT-223

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for SOT-223 Figure 3. Thermal impedance for SOT-223

Figure 4. Safe operating area for TO-92 Figure 5. Thermal impedance for TO-92

6/18 DocID9509 R ev 14

Figure 6. Output characteristics Figure 7. Transfer characteristics