The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital
communication devices.
This new all-solid-state bandpass filter (BPF) uses a piezoelectric with a large electromechanical coefficient
(lithium tantalate: LiTaO
3). The filter has a wide bandwidth, and is very stable.
FEATURES
■
• Wide frequency range 1.5 to 100MHz
• Wide fractional bandwidth (%): 0.1 to 2.5
• Low insertion loss: 6dB or less
• Excellent temperature characteristics: 1.5 to 35MHz: ±400ppm or less (0 to 60°C)
36 to 100MHz: –30ppm/°C (0 to 60°C)
• Small frequency deviation ∆f
• Highly reliable hermetically sealed package
• Compatible with small 14-pin DIP IC
PACKAGE
■
O < ±500ppm eliminating the need for adjustment
14-PIN DIP SIZE METAL CASE
F1/F2/F3 SERIES
PIN ASSIGNMENT
■
(BOTTOM VIEW)
Pin No.Pin nameDescription
1INInput pin
7GNDGround pin
8NCNo connection
14OUTOutput pin
MAXIMUM RATINGS
■
ItemSymbolRating
14
1
7
8
Unit
Operating temperatureTa–20 to 80°C
Storage temperatureTstg–40 to 80°C
Insulation resistanceIR100 (100V DC)MΩ
Frequency ra nge––1.5 to 100MHz
RECOMMENDED OPERATING CONDITIONS
■
ItemSymbolRating
Operating temperatureTa0 to 70°C
2
Unit
F1/F2/F3 SERIES
STANDARD FREQUENCY
■
SeriesStandard frequencyApplicationRemarks
1.544MHzFor the U.S. and Japan (primary group)
2.048MHzFor Europe (primary group)
3.088MHzFor the U.S. and Japan (primary group)1.544 × 2
3.152MHzFor the U.S. and Japan (primary group)
F1
F2
F344.736MHzFor the U.S. (tertiary group)
4.096MHzFor Europe (primary group)2.048 × 2
6.312MHzFor the U.S. and Japan (secondary group)
8.192MHzFor the U.S. and Japan (secondary group)
8.448MHzFor Europe (secondary group)
12.624MHzFor the U.S. and Japan (secondary group)6.312 × 2
16.384MHzFor the U.S. and Japan (secondary group)8.192 × 2
16.896MHzFor Europe (secondary group)8.448 × 2
32.064MHzFor Japan (tertiary group)
34.368MHzFor Europe (tertiary group)
3
F1/F2/F3 SERIES
ELECTRICAL CHARACTERISTICS
■
F1 Series
ItemSymbolCondition
Rating
UnitRemarks
Min.TypicalMax.
Frequency deviation∆fO–––500––+500ppmfO standard
Load QQ––1000––40––
Insertion loss
Stop band attenuationAOUTfO ± 10MHz20––––dB
Frequency stability with
temperature
IL
∆f (Ta)–––400––+400ppm
––––––6dB
25°C standard,
Ta = 0 to 70°C
F2 Series
Rating
ItemSymbolCondition
UnitRemarks
Min.TypicalMax.
Frequency deviation∆fO–––500––+500ppmfO standard
Load QQ––1000––40––
Insertion loss
Stop band attenuationAOUTfO ± 10MHz20––––dB
Frequency stability with
temperature
IL
∆f (Ta)–––400––+400ppm
––––––6dB
25°C standard,
Ta = 0 to 70°C
F3 Series
ItemSymbolCondition
Frequency deviation∆fO–––500––+500ppmfO standard
Load QQ––200––50––
Insertion loss
Stop band attenuationAOUTfO ± 10MHz20––––dB
Frequency stability with
temperature
IL
∆f (Ta)–––1350––750ppm
––––––6dB
Min.TypicalMax.
UnitRemarks
25°C standard,
Ta = 0 to 70°C
Rating
4
ELECTRICAL CHARACTERISTICS
■
F1/F2/F3 SERIES
No.
11.544FAR-F1DA-1M5440-G201110 ±203 or less–90±20790
21.544FAR-F1DA-1M5440-G202110 ±203 or less–90±201000
31.544FAR-F1DA-1M5440-G20360 ±103 or less–95±102035/20pF
41.544FAR-F1DA-1M5440-G205110 ±203 or less–90±202000
52.048FAR-F1DA-2M0480-G20140 ±103 or less–90±102035
62.048FAR-F1DA-2M0480-G202100 ±203 or less–90±201000
73.088FAR-F1DA-3M0880-G201150 ±203 or less–90±20640
83.152FAR-F1DA-3M1520-G20185 ±153 or less–90±151285
94.096FAR-F1DA-4M0960-G201110 ±203 or less–90±20750
106.312FAR-F1DA-6M3120-G201110 ±203 or less–90±20985
116.312FAR-F1DA-6M3120-G202110 ±203 or less–90±201000
128.192FAR-F1DA-8M1920-G201100 ±203 or less–90±20980
138.448FAR-F1DA-8M4480-G201110 ±203 or less–90±20980
1412.624FAR-F1DA-12M624-G201100 ±203 or less–90±20590
Standard
frequency
(MHz)
Part number
Load Q
Insertion
loss, IL (dB)
Phase
rotation θ
(degree)
Terminating
impedance
Z (Ω)
Specification
1516.384FAR-F1DA-16M384-G201100 ±203 or less–90±20410
1616.896FAR-F1DA-16M896-G201100 ±203 or less–90±20390
1732.064FAR-F2DA-32M064-G201100 ±103 or less–90±15100
1834.368FAR-F2DA-34M368-G201100 ±103 or less–90±15100
1944.736FAR-F3DA-44M736-G20165 ±156 or less38±10105
TEST CIRCUIT
■
50ΩZ
OSC
Z
50Ω
LM
5
F1/F2/F3 SERIES
CHARACTERISTICS SAMPLE
■
Pass band characteristicStop band characteristic
A : T/R (dB) B : θ 0 MKR 1544000.000Hz
A MAX 0.000 dB GAIN –722.721mdB
B MAX 180.0 deg PHASE –93.1330deg
A/DIV
B MIN
1.000
–180.0
dB CENTER
deg SPAN
1544000.000Hz
50000.000Hz
Temperature characteristic
1000
A : T/R (dB) B : θ 0 MKR 1544000.000Hz
A MAX 0.000 dB GAIN –724.276mdB
B MAX 180.0 deg PHASE deg
A/DIV 5.000 dB CENTER 1544000.000Hz
B MIN –180.0 deg SPAN 200000.000Hz
F3 Series
F2 Series
F1 Series
–1000
Frequency change (ppm)
–20 0 20 40 60 80
Temperature (°C)
PART NUMBERING SYSTEM
■
[Example]
FAR–F1
DA––G
➀➁ ➂
➀ Series designation
➁ Frequency designation: The standard frequency is designated in six alphanumeric characters. M is used
to designate the decimal point in MHz. Refer to “ELECTRIC CHARA CTERISTICS”
in detail
Example: 1.544MHz: 1M5440
➂ Serial number:The serial number is assigned from 201 to 999 (201 is normal).
6
MARKING
■
F1/F2/F3 SERIES
DIMENSIONS
■
20.8 max (0.819)
18.3 (0.720)
Fujitu logo
F
No. 1 pin position
Standard frequency
F-1M5440
G201
ЧЧЧЧЧЧ
Lot number
10.7 (0.421)
Unit: mm (in.)
15.2 (0.598)
1
14
ø0.5 (0.020)
7
8
Hmax
5.5
(0.217)
7.6 (0.299)
13.1 max (0.516)
Series
F1 < 3 MHz
F1 ≥ 3 MHz
F2
F3
H
8.5 (0.335)
5.8 (0.228)
5.8 (0.228)
5.8 (0.228)
7
FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka
Nakahara-ku, Kawasaki-shi
Kanagawa 211-88, Japan
Tel: (044) 754-3763
Fax: (044) 754-3329
North and South America
FUJITSU MICROELECTRONICS, INC.
Semiconductor Division
3545 North First Street
San Jose, CA 95134-1804, U.S.A.
Tel: (408) 922-9000
Fax: (408) 432-9044/9045
FUJITSU MICROELECTRONICS ASIA PTE. LIMITED
#05-08, 151 Lorong Chuan
New Tech Park
Singapore 556741
Tel: (65) 281-0770
Fax: (65) 281-0220
All Rights Reserved.
The contents of this document are subject to change without
notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document presented
as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the
use of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in
standard applications (computers, office automation and other
office equipment, industrial, communications, and measurement
equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage,
or where extremely high levels of reliability are demanded (such
as aerospace systems, atomic energy controls, sea floor
repeaters, vehicle operating controls, medical devices for life
support, etc.) are requested to consult with FUJITSU sales
representatives before such use. The company will not be
responsible for damages arising from such use without prior
approval.
Any semiconductor devices have inherently a certain rate of
failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your
facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating
conditions.
24
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Control Law of Japan, the
prior authorization by Japanese government should be required
for export of those products from Japan.