Fuji Electric 7MBR75U4B120-50 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

Power Integrated Module

7MBR75U4B120

MS6M 0855

Feb. 02 ’05

Feb. 02 ’05

S.Miyashita

M.Watanabe

K.Yamada

Y.Seki

MS6M0855

1

15

H04-004-07b

R e v i s e d R e c o r d s

Date

Feb.-02 -’05 K. Yamada

Classi-

fication

Enactment

Ind. Content

Applied

date

Issued

date

Drawn Checked Checked Approved

M.W atanabe

Y.Seki

MS6M0855

2

15

H04-004-06b

1. Outline Drawing ( Unit : mm )

7MBR75U4B120

2. Equivalent circuit

[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]

2(S) 3(T)1(R)

21(P)

22(P1)

7(B)

14(Gb)

LABEL

20
(Gu)

19(Eu)

13(Gx)

shows theoretical dimension.
( ) shows reference dimension.

18
(Gv)

17(Ev)

4(U)

12(Gy) 11(Gz)

5(V)

16
(Gw)

15(Ew)

6(W)

98

23(N)

24(N1)

MS6M0855

10(En)

3

15

H04-004-03a

3.Abso lute Maxi mum Ratings ( at Tc= 25°C unless o therw ise specified )

Items Symbols Condi tions

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Inverter

Collector Power Dissipation

Collector-Emitter voltage VCES

Gate-Emitter voltage VGES ±20

Collector current

Brake

Collector Power Dissipation Pc 1 device 160

Repetitive peak reverse Voltage (Diode) V

Repetitive peak reverse Voltage VRRM 1600

Average Output Current

Surge Current (Non-Repetitive) IFSM

Converter

Junction temperature

Storage temperature

Isolation
voltage

Screw
Torque

(*1) All terminals should be connected together when isolation test will be done.

(*2) Two thermistor terminals should be connected together, each other terminals should be connected together

and shorted to base plate when isolation test will be done.

(*3) Recommendable Value : 2.5~3.5 Nm (M5)

between terminal and copper base (*1)

between thermistor and others (*2)

Mounting (*3)

VCES

VGES

Ic

Icp

-Ic 75

-Ic pulse

Pc

Ic

Icp 1ms

VRRM

Continuous

1ms

1ms

1 device

Continuous

50Hz/60Hz

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

sine wave

Tj=150°C, 10ms

half sine wave

Tj

Tstg

Viso

-

AC : 1min.

Maxim um

Rati ngs

1200

±20 V

75

50

150

100

150

275

1200 V

35

25

70

50

1200

75 AIo

520

1352

150

-40 ~ +125

2500

Units

V

A

W

V

A

W

V

A

A2sI2tI2t (Non-Repetitive)

°C

VAC

N m3.5

MS6M0855

4

15

H04-004-03a

4. Electrical char acteri stic s ( at Tj= 25°C unless otherwi se specified)

Zero gate voltage
Collector current

Gate-Emitter
leakage current

Gate-Emitter
threshold voltage

Collector-Emitter
saturation voltage

Inverter

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Zero gate voltage
Collector current

Gate-Emitter
leakage current

Collector-Emitter
saturation voltage

Brake

Turn-on time

Turn-off time

Reverse current

Forward on voltage

Reverse current IRRM VR=1600V -

Converter

Resistance R

B value K3305 3375 3450T = 25/50°C

Thermistor

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

CiesInput capacitance

ton

tr

tr (i)

toff

tf

VF

(terminal)

VF

(chip)

trr

ICES

IGES

VCE(sat)

(terminal)

VCE(sat)

(chip)

ton Vcc = 600V - 0.53 1.20

tr Ic = 35A - 0.43 0.60

toff

tf - 0.07 0.30

VFM

B

VGE = 0V

VCE = 1200V

VCE = 0V

VGE=±20V

VCE = 20V

Ic = 75mA

VGE=15V

Ic = 75A

VCE=10V,VGE=0V,f=1MHz

Vcc = 600V

Ic = 75A

VGE=±15V

Rg = 22 Ω

VGE=0V

IF = 75A

VGE = 0V

VCE = 1200V

VCE = 0V

VGE=±20V

VGE=15V

Ic = 35A

VGE=±15V 1.00

Rg = 43 Ω

VR=1200V - -

VGE=0V

IF = 75A

T = 25°C

T =100°C 465

Tj= 25°C

Tj=125°C

Tj= 25°C

Tj=125°C

Tj= 25°C

Tj=125°C

Tj= 25°C -

Tj=125°C

Tj= 25°C

Tj=125°C

Tj= 25°C

Tj=125°C -

terminal

chip - 1.30

Characteri stics

min. typ. max.

-

-

4.5

-

- 2.95

- 2.20

-

-

-

-

-

-

-

-

-

- 2.15 2.60

- 2.50 -

- 1.95 2.40

- 2.30

-

- 1.40

- 5000 -

-

-

6.5

2.55

2.60

6

0.40

0.15

0.03-

0.42-

0.07

2.25 2.45

2.45-

1.90

2.10

- 0.35

-

- 200

0.37

- 1.0 mA

495

1.0 mA

200

8.5 V

2.80

-

2.45

-

1.20

0.60

-

1.00

0.30

-

2.10

-

1.0-

1.0 mAIRRM

1.75

-

520

Uni tsItems Symbols Condition s

nA

V

nF-

μs

V

μsIF = 75A

mA

nA

V

μs

V

Ω

MS6M0855

5

15

H04-004-03a

5. Thermal resistance characterist ics

Store modules in a place with few temperature changes in order to avoid condensation on the module surface.

Items Symbols Conditi ons

Inverter IGBT

Thermal resistance(1device)

Contact Thermal resistance

(1device) (*4)

Rth(j-c)

Rth(c-f) with Thermal Compound - 0.05 -

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

Inverter FWD

Brake IGBT

Converter Diode

Charact eristics

min. typ. max.

-

- - 0.73

-

-

- 0.45

-

-

6. Indication on module

Log o of prod uction

7MBR75U4B120

75A 1200V

Lo t.No. Place of manufacturing (code)

7.Applicable category

This specification is applied to Power Integrated Module named 7MBR75U4B120 .

0.76

0.50

Uni ts

°C/W

8.Sto rage and transportation notes

The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .

・

・

Avoid exposure to corrosive gases and dust.

・

Avoid excessive external force on the module.

・

Store modules with unprocessed terminals.

・

Do not drop or otherwise shock the modules when transporting.

・

9. Definition s of sw i tchin g time

R

G

V

GE

V

CE

Ic

90%

～

～

0V

V

L

Vcc

GE

V

CE

Ic

0V
0A

t

r r

I

r r

Ic

～

90%

10%

10% 10%

t

r( i )

t

r

t

o n

～

V

CE

～

～

t

o f f

0V

90%

t

f

10. Packing and Labeling
Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

MS6M0855

6

15

H04-004-03a

11. Reliability test results

Reli abil ity Test Items

100m/s

2

5000m/s

2

235±5

5

260±5

5

Low temp. -40

5 ℃ High temp. 125

5

RT 5 ~ 35

6

Thermal Shock

5

( 0 : 1 )

Test
cate-

Test items Test methods and conditions

gories

1 Terminal Strength Pull force : 20N

(Pull test) Test time : 10±1 sec.

2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5)

Test time : 10±1 sec.

3 Vibration Range of frequency : 10 ~ 500Hz

Sweeping time : 15 min.
Acceleration :
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)

4 Shock Maximum acceleration :

Pulse width : 1.0msec.
Direction : Each X,Y,Z axis
Test time : 3 times/direction

Mechanical TestsEnvironment Tests

5 Solderabitlity Solder temp. :

Immersion time : 5±0.5sec.
Test time : 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.

6 Resistance to Solder temp. :

Soldering Heat Immersion time : 10±1sec.

Test time : 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.

1 High Temperature Storage temp. : 125±5 ℃

Storage Test duration : 1000hr.

2 Low Temperature Storage temp. : -40±5 ℃

Storage Test duration : 1000hr.

3 Temperature Storage temp. : 85±2 ℃

Humidity Relative humidity : 85±5%
Storage Test duration : 1000hr.

4 Unsaturated Test temp. : 120±2 ℃

Pressurized Vapor Test humidity : 85±5%

Test duration : 96hr.

5 Temperature

Cycle Test temp. :

℃

℃

±

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Test Method 401

Ⅰ

Method

Test Method 402

Ⅱ

method

Test Method 403

Reference 1

Condition code B

Test Method 404

Condition code B

Test Method 303

Condition code A

Test Method 302

Condition code A

Test Method 201

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

Test Method 105

Number

of

sample

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

Accept­ance
number

( 0 : 1 )

( 0 : 1 )

±

℃

Dwell time : High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

Number of cycles : 100 cycles

+0

Test temp. :

High temp. 100 -5

+5

Low temp. 0 -0 ℃
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles

MS6M0855

℃

℃

Test Method 307

Ⅰ

method

Condition code A

7

15

H04-004-03a

Reli abil ity Test Items

Test

Ta = 125

(Tj

150 ℃)

Ta = 125

(Tj

150 ℃)

2 oC

5%



Tj=100±5 deg

Tj ≦

150 ℃, Ta=25±5

cate­gories

Test items Test methods and conditions

1 High temperature

Reverse Bias Test temp. :

Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E

Test duration : 1000hr.

2 High temperature

Bias (for gate) Test temp. :

Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E

Endurance TestsEndurance Tests

Test duration : 1000hr.

3 Temperature

Humidity Bias Test temp. :85±

Relative humidity :85±
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E

4 Intermitted ON time : 2 sec.

Operating Life OFF time : 18 sec.
(Power cycle) Test temp. :
( for IGBT )

Test duration : 1000hr.

Number of cycles : 15000 cycles

≦

VGE = 0V

≦

VCE = 0V

VGE = 0V

±5 ℃

±5 ℃

℃

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Test Method 101

Test Method 101

Test Method 102

Condition code C

Test Method 106

Number

of

sample

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

Accept­ance
number

Failure Criteria

Item Characteristic Symbol Failure criteria Unit Note

Lower limit Upper limit

Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A

Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT  VGE - USL×1.2 mV
resistance or  VCE

FWD  VF - USL×1.2 mV

Isolation voltage Viso Broken insulation ­Visual Visual inspection
inspection Peeling - The visual sample -

Plating

and the others

LSL : Lower specified limit.
USL : Upper specified limit.

Note :

Each parameter measurement read-outs shall be made after stabilizing the components

Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.

at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component

And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.

shall be made wipe or dry completely before the measurement.

MS6M0855

8

15

H04-004-03a

Reliability Test Results

Test
cate­gorie

s

Test items

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Number

of test

sample

Number

of

failure

sample

1 Terminal Strength

(Pull test)

2 Mounting Strength

Test Method 401

MethodⅠ

Test Method 402

methodⅡ

3 Vibration Test Method 403 5 0

Condition code B

4 Shock

5 Solderabitlity Test Method 303 5 0

Mechanical Tests

Test Method 404

Condition code B

Condition code A

6 Resistance to Soldering Heat Test Method 302 5 0

Condition code A

1 High Temperature Storage

2 Low Temperature Storage

3 Temperature Humidity

Storage

4 Unsaturated

Pressurized Vapor

5 Temperature Cycle

Test Method 201

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

Test Method 105

Environment Tests

5 0

5 0

5 0

5 0

5 0

5 *

5 0

5 0

6 Thermal Shock

1 High temperature Reverse Bias

2 High temperature Bias

( for gate )

3 Temperature Humidity Bias

Endurance Tests

4 Intermitted Operating Life

(Power cycling)
( for IGBT )

Test Method 307

method Ⅰ

Condition code A

Test Method 101

Test Method 101

Test Method 102

Condition code C

Test Method 106

MS6M0855

5 0

5 *

5 0

5 *

5 0

* under confirmation

9

15

H04-004-03a

[ Inverter ] [ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Collector current : Ic [A]

12V

Collector current : Ic [A]

Collector current : Ic [A]

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

0

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

120

Tj= 25°C / chip

120

100

80

60

40

20

0

0 1 2 3 4 5

VGE=20V

Collector-Emitter voltage : VCE [V]

15V

10V

8V

[ Inverter ] [ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip Tj=25°C / chip

120

Tj=25°C

100

80

60

40

20

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Tj=125°C

100

80

60

40

20

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

10

8

6

4

2

Collector - Emitter voltage : VCE [ V ]

0

5 10 15 20 25

Gate-Emitter voltage : VGE [V]

VGE=20V 15V 12V

10V

8V

Ic=100A
Ic=50A
Ic= 25A

Capacitance vs. Collector-Emitter voltage (typ.)

10.0

1.0

Capacitance : Cies, Coes, Cres [ nF ]

0.1

0 10 20 30

Collector-Emitter voltage : VCE [V]

[ Inverter ] [ Inverter ]

Dynamic Gate charge (typ.)

Vcc=600V， Ic=75A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C

Cies

Cres

Coes

0 50 100 150 200 250 300

Gate charge : Qg [nC]

MS6M0855

VGE

VCE

10

15

H04-004-03a

[ Inverter ] [ Inverter ]

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

tr

Collector current : Ic [A]

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω, Tj= 25°C

10000

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω, Tj=125°C

10000

1000

toff

ton

100

10

0 25 50 75 100

Collector current : Ic [A]

tr

tf

1000

tr

100

10

0 25 50 75 100

Collector current : Ic [A]

ton
toff

tf

[ Inverter ] [ Inverter ]

Switching time vs. Gate resistance (typ.)

Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C

10000

ton

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

10.0 100.0 1000.0

Gate resistance : Rg [Ω]

toff

tf

Switching loss vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω

10

8

6

4

2

Switching loss : Eon, Eoff, Err [mJ/pulse ]

0

0 20 40 60 80 100

Collector current : Ic [A]

Eoff(25°C)

Eon(125°C)

Eoff(125°C)
Eon(25°C)

Err(125°C)

Err(25°C)

[ Inverter ] [ Inverter ]

Switching loss vs. Gate resistance (typ.)

Reverse bias safe operating area (max.)

Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 22Ω ,Tj <= 125°C

40

30

20

10

Switching loss : Eon, Eoff, Err [mJ/pulse ]

0

10.0 100.0 1000.0

Gate resistance : Rg [Ω]

Eon

Eoff

Err

200

150

100

50

0

0 400 800 1200

Collector-Emitter voltage : VCE [V]

MS6M0855

11

15

H04-004-03a

[ Inverter ] [ Inverter ]

Resistance : R [kΩ]

Forward current : IF [A]

IGBT[Brake]

Forward current : IF [A]

Forward current vs. Forward on voltage (typ.)

chip

120

Reverse recovery characteristics (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω

1000

100

80

60

40

20

0

0 1 2 3 4

Tj=25°C

Tj=125°C

Forward on voltage : VF [V]

[ Converter ]

Forward current vs. Forward on voltage (typ.)

chip

120

100

80

60

Tj=25°C

Tj=125°C

trr (125°C)

100

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

10

0 25 50 75 100

Forward current : IF [A]

trr (25°C)

Irr (125°C)

Irr (25°C)

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5

Forward on voltage : VFM [V]

Transient thermal resistance (max.) Temperature characteristic (typ.)

10.000

1.000

0.100

Thermal resistanse : Rth(j-c) [ °C/W ]

0.010

0.001 0.010 0.100 1.000

Pulse width : Pw [sec]

FWD[Inverter]

Conv. Diode

IGBT[Inverter]

[ Thermistor ]

100

10

1

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

MS6M0855

12

15

H04-004-03a

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

[ Brake ] [ Brake ]

Collector current : Ic [A]

VGE=20V

12V

Collector current : Ic [A]

Collector current : Ic [A]

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

0

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)

60

Tj= 25°C / chip

60

Tj= 125°C / chip

50

40

30

20

10

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

15V

10V

8V

[ Brake ] [ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip Tj=25°C / chip

60

50

40

30

20

10

0

0 1 2 3 4 5

Tj=25°C

Tj=125°C

Collector-Emitter voltage : VCE [V]

50

40

30

20

10

0

0 1 2 3 4 5

10

8

6

4

2

Collector - Emitter voltage : VCE [ V ]

0

5 10 15 20 25

VGE=20V 15V 12V

Collector-Emitter voltage : VCE [V]

Gate-Emitter voltage : VGE [V]

10V

8V

Ic=50A
Ic=25A
Ic=12.5A

Capacitance vs. Collector-Emitter voltage (typ.)

10.0

1.0

Capacitance : Cies,Coes,Cres [nF]

0.1

0 10 20 30

Collector-Emitter voltage : VCE [V]

[ Brake ] [ Brake ]

Dynamic Gate charge (typ.)

Vcc=600V， Ic=35A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C

VGE

Cies

Cres

Coes

0 25 50 75 100 125 150

Gate charge : Qg [nC]

VCE

MS6M0855

13

15

H04-004-03a

Warnings

- This product shall be used within its absolute maximum rating (voltage, current, and temperature).　This product

DC capacitor. Guaranteed value of the rush current is specified as I

2

t (non-repetitive), however frequent rush

I2t(非繰返

し)として

表記

されていますが

、この突入電流

が頻繁に流れると

I2t破壊とは別に

整流用

ダイオード

の繰返し負荷に

100mm

100um

10um

may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals
may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg.

製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。また、使用するプリント板が不適切な場合、主端子ピンの温度がTstg以上になることがあります。主端子ピン
もTstg範囲内でご使用下さい。

- Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.

万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。

Use this product after realizing enough working on environment and considering of product's reliability life.

­This product may be broken before target life of the system in case of using beyond the product's reliability life.

製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。

When electric power is connected to equipments, rush current will be flown through rectifying diode to charge

-

current through the diode might make it's power cycle destruction occur because of the repetitive power.
In application which has such frequent rush current, well consideration to product life time (i.e. suppressing
the rush current) is necessary.

電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は

よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値
を抑えるなど、製品寿命に十分留意してご使用下さい。

If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,

­sulfurous acid gas), the product's performance and appearance can not be ensured easily.

酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。

Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is

­classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.

本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる
場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際
の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。

Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor

­contact problem.

主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合があります。

- Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.

冷却フィンはネジ取り付け位置間で平坦度を
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フィンの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。

In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the

­thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)

素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)

で

以下、表面の粗さは

以下にして下さい。　過大な凸反り

It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA

­specification. This product may be broken if the locus is out of the RBSOA.

ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。

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products. This specification never ensure to enforce the industrial property and other rights, nor license the

Warnings

If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some

でご

使用下

さい

。

­countermeasures against static electricity.

制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。

- Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.

素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。

In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent

­this malfunction. (Recommended value : -VGE = -15V)

逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。　（推奨値 : -VGE = -15V)

In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in

­the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.

ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。

- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.

VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内

Cautions

- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.

富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。

- The application examples described in this specification only explain typical ones that used the Fuji Electric Device

enforcement rights.

本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。

- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,　please apply after confirmation
of this product to be satisfied about system construction and required reliability.

本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。

If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.

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