Fuji Electric 7MBR75U4B120-50 SPECIFICATION
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Power Integrated Module
7MBR75U4B120
MS6M 0855
Feb. 02 ’05
Feb. 02 ’05
S.Miyashita
M.Watanabe
K.Yamada
Y.Seki
MS6M0855
1
15
H04-004-07b
R e v i s e d R e c o r d s
Date
Feb.-02 -’05 K. Yamada
Classi-
fication
Enactment
Ind. Content
Applied
date
Issued
date
Drawn Checked Checked Approved
M.W atanabe
Y.Seki
MS6M0855
2
15
H04-004-06b
1. Outline Drawing ( Unit : mm )
7MBR75U4B120
2. Equivalent circuit
[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]
2(S) 3(T)1(R)
21(P)
22(P1)
7(B)
14(Gb)
LABEL
20
(Gu)
19(Eu)
13(Gx)
shows theoretical dimension.
( ) shows reference dimension.
18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
16
(Gw)
15(Ew)
6(W)
98
23(N)
24(N1)
MS6M0855
10(En)
3
15
H04-004-03a
3.Abso lute Maxi mum Ratings ( at Tc= 25°C unless o therw ise specified )
Items Symbols Condi tions
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Inverter
Collector Power Dissipation
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES ±20
Collector current
Brake
Collector Power Dissipation Pc 1 device 160
Repetitive peak reverse Voltage (Diode) V
Repetitive peak reverse Voltage VRRM 1600
Average Output Current
Surge Current (Non-Repetitive) IFSM
Converter
Junction temperature
Storage temperature
Isolation
voltage
Screw
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting (*3)
VCES
VGES
Ic
Icp
-Ic 75
-Ic pulse
Pc
Ic
Icp 1ms
VRRM
Continuous
1ms
1ms
1 device
Continuous
50Hz/60Hz
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
sine wave
Tj=150°C, 10ms
half sine wave
Tj
Tstg
Viso
-
AC : 1min.
Maxim um
Rati ngs
1200
±20 V
75
50
150
100
150
275
1200 V
35
25
70
50
1200
75 AIo
520
1352
150
-40 ~ +125
2500
Units
V
A
W
V
A
W
V
A
A2sI2tI2t (Non-Repetitive)
°C
VAC
N m3.5
MS6M0855
4
15
H04-004-03a
4. Electrical char acteri stic s ( at Tj= 25°C unless otherwi se specified)
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Inverter
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Collector-Emitter
saturation voltage
Brake
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current IRRM VR=1600V -
Converter
Resistance R
B value K3305 3375 3450T = 25/50°C
Thermistor
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
CiesInput capacitance
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton Vcc = 600V - 0.53 1.20
tr Ic = 35A - 0.43 0.60
toff
tf - 0.07 0.30
VFM
B
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 75mA
VGE=15V
Ic = 75A
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
Ic = 75A
VGE=±15V
Rg = 22 Ω
VGE=0V
IF = 75A
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VGE=15V
Ic = 35A
VGE=±15V 1.00
Rg = 43 Ω
VR=1200V - -
VGE=0V
IF = 75A
T = 25°C
T =100°C 465
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C -
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C -
terminal
chip - 1.30
Characteri stics
min. typ. max.
-
-
4.5
-
- 2.95
- 2.20
-
-
-
-
-
-
-
-
-
- 2.15 2.60
- 2.50 -
- 1.95 2.40
- 2.30
-
- 1.40
- 5000 -
-
-
6.5
2.55
2.60
6
0.40
0.15
0.03-
0.42-
0.07
2.25 2.45
2.45-
1.90
2.10
- 0.35
-
- 200
0.37
- 1.0 mA
495
1.0 mA
200
8.5 V
2.80
-
2.45
-
1.20
0.60
-
1.00
0.30
-
2.10
-
1.0-
1.0 mAIRRM
1.75
-
520
Uni tsItems Symbols Condition s
nA
V
nF-
μs
V
μsIF = 75A
mA
nA
V
μs
V
Ω
MS6M0855
5
15
H04-004-03a
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