Fuji Electric 7MBR75U2B060-50 Data Sheet

7MBR75U2B060

IGBT MODULE (U series) 600V / 75A / PIM

Features

· Low VCE(sat)

· Compact Package

· P.C. Board Mount Module

· Converter Diode Bridge Dynamic Brake Circuit

Applications

· Inverter for Motoe Drive

· AC and DC Servo Drive Amplifier

· Uninterruptible Power Supply

IGBT Modules

Maximum ratings and characteristics

Absolute maximum ratings (T c=25°C unless otherwise specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Repetitive peak reverse voltage

Average output current

Surge current (Non-Repetitive)

Converter Brake Inverter

I2t (Non-Repetitive)

Operating junction temperature

Storage temperature

Isolation between terminal and copper base *2

voltage between thermistor and others *3

Mounting screw torque

*1 Recommendable value : 2.5 to 3.5 N·m (M5)

*2 All terminals should be connected together when isolation test will be done.

*3 Two thermistor terminals should be connected together, each other terminals should be

connected together and shorted to base plate when isolation test will be done.

VCES

VGES

IC

ICP

-IC

-IC pulse

PC

VCES

VGES

IC

ICP

PC

VRRM

IO

IFSM

I2t

Tj

Tstg

Viso

Continuous

1ms

1 device

Continuous

1ms

1 device

50Hz/60Hz sine wave

Tj=150°C, 10ms

half sine wave

AC : 1 minute

600

±20

75

150

75

150

255

600

±20

30

60

133

600

800

75

525

1378

+150

-40 to +125

AC 2500

3.5 *1

V

A

W

V

A

W

V

A

A2s

°C

V

N·m

IGBT Module

7MBR75U2B060

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse current

Forward on voltage

Reverse current

Resistance

B value

Thermistor Converter Brake Inverter

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

ton

tr

tr(i)

toff

tf

VF

(terminal)

VF

(chip)

trr

ICES

IGES

VCE(sat)

(terminal)

VCE(sat)

(chip)

ton

tr

toff

tf

IRRM

VFM

IRRM

R

B

VCE=600V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=75mA

VGE=15V

Ic=75A

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

V

GE=0V, VCE=10V, f=1MHz

VCC=300V

IC=75A

VGE=±15V

RG=47Ω

VGE=0V

IF=75A

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

IF=75A

VCE=600V, VGE=0V

VCE=0V, VGE=±20V

IC=30A

VGE=15V

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

VCC=300V

IC=30A

VGE=±15V

RG=120Ω

VR=600V

IF=75A terminal

VGE=0V chip

VR=800V

T=25°C

T=100°C

T=25/50°C

- - 1.0

- - 200

6.2 6.7 7.7

- 2.20 2.50

- 2.40 -

- 1.85 -

- 2.15 -

- 5.4 -

- 0.42 1.20

- 0.24 0.60

- 0.05 -

- 0.42 1.20

- 0.03 0.45

- 1.95 2.30

- 2.00 -

- 1.60 -

- 1.65 -

- - 0.35

- - 1.0

- - 200

- 2.00 2.30

- 2.30 -

- 1.85 -

- 2.15 -

- 0.42 1.20

- 0.24 0.60

- 0.42 1.20

- 0.03 0.45

- - 1.0

- 1.20 1.50

- 1.10 -

- - 1.0

- 5000 -

465 495 520

3305 3375 3450

mA

nA

V

nF

µs

V

µs

mA

nA

V

µs

mA

V

mA

Ω

K

Thermal resistance Characteristics

Item Symbol Condition Characteristics Unit Min. Typ. Max.

Inverter IGBT

Thermal resistance ( 1 device ) Rth(j-c)

Inverter FWD

Brake IGBT

Converter Diode

Contact thermal resistance * Rth(c-f)

With thermal compound

* This is the value which is defined mounting on the additional cooling fin with thermal compound

- - 0.49

- - 0.79

- - 0.94 °C/W

- - 0.66

- 0.05 -

Equivalent Circuit Schematic

1(R)

[Converter]

2(S) 3(T)

21(P)

23(N)

22(P1)

7(B)

[Brake] [Inverter]

14(Gb)

24(N1)

20(Gu)

19(Eu)

13(Gx)

18(Gv)

4(U)

12(Gy)

17(Ev)

16(Gw)

15(Ew)

5(V) 6(W)

11(Gz)

[Thermistor]

89

10(En)

IGBT Module

Characteristics (Representative)

[ Invert er ] [ Invert er ]

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

175

VGE=20V 15V 12V

150

7MBR75U2B060

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

175

VGE=20V 15V 12V

150

125

100

75

50

Colector current : Ic [ A ]

25

0

012345

Collector-Emitter voltage : VCE [ V ]

10V

8V

[ Invert er ] [ Invert er ]

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip Tj=25°C / chip

175

150

125

100

75

50

Collector current : Ic [ A ]

25

0

01234

Collector-Emitter voltage : VCE [ V ]

Tj=125°CTj=25°C

125

100

75

50

Collector current : Ic [ A ]

25

0

012345

Collector-Emitter voltage : VCE [ V ]

10V

8V

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

10

8

6

4

2

Collector-Emitter voltage : VCE [ V ]

0

5 10152025

Gate-Emitter voltage : VGE [ V ]

Ic=150A Ic=75A Ic=37.5A

[ Invert er ] [ Invert er ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

Vcc=300V, Ic=75A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C

10.00

Cies

1.00

0.10

Capacitance : Cies, Coes, Cres [ nF ]

0.01

0102030

Collector-Emitter voltage : VCE [ V ]

Coes

Cres

500

400

300

VGE

200

100

Collector-Emitter voltage : VCE [ V ]

0

0 50 100 150 200 250 300

Gate charge : Qg [ nC ]

VCE

25

20

15

10

5

Gate-Emitter voltage : VGE [ V ]

0