Fuji Electric 7MBR75SD-060 Data Sheet
7MBR75SD060
PIM/Built-in converter with thyristor
and brake (S series)
600V / 75A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
Converter Thyristor Brake Inverter
I2t (Non-Repetitive)
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
600
±20
75
150
75
300
600
±20
50
100
200
600
800
800
75
750
125
800
75
525
1378
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
IGBT Module
7MBR75SD060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Thyristor Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, Ic=75A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=75A
VGE=±15V
RG=33Ω
IF=75A chip
terminal
IF=75A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=±15V
RG=51Ω
VR=600V
VDM=800V
VRM=800V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=75A chip
terminal
IF=75A chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
200
200
5.5 7.8
1.8
2.1
7500
0.45
0.25
0.40
0.05
1.7
2.0
1.8
2.05
0.45
0.25
0.40
0.05
1.1
1.2
1.1
1.2
5000
465 495 520
3305 3375 3450
8.5
2.55
1.2
0.6
1.0
0.35
2.7
300
200
200
2.55
1.2
0.6
1.0
0.35
200
1.0
1.0
100
2.5
1.18
1.5
200
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Thermal resistance Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.42
0.90
0.63
0.56 °C/W
0.70
0.05
IGBT Module
Characteristics (Representative)
7MBR75SD060
Collector current vs. Collector-Emitter voltage
200
150
100
Collector current : Ic [ A ]
50
0
012345
[ Inverter ]
Tj= 25° C ( typ.)
12V
15VVGE= 20V
10V
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage
200
150
[ Inverter ]
VGE=15V (typ.)
Tj= 25°C
Tj= 125°C
Collector current vs. Collector-Emitter voltage
200
150
100
Collector current : Ic [ A ]
50
0
012345
[ Inverter ]
Tj= 125°C(typ.)
15VVGE= 20V
12V
10V
Collector - Emitter voltage : VCE [ V ]
Colle c tor-Emitt er volt a ge vs. Gate-Emit ter voltage
10
8
[ Inverter ]
Tj= 25° C ( typ.)
100
Collector current : Ic [ A ]
50
0
01234
Collector - Emitter voltage : VCE [ V ]
[ Inv e rter ]
Capacitan ce vs. Collector-Emitter voltage (typ.)
30000
10000
1000
Capacitance : Cies, Coes, Cres [ pF ]
VGE=0V, f= 1MHz, Tj= 25°C
Cies
Coes
Cres
6
4
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Ic=150A
Ic= 75A
Ic= 37.5A
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
500
400
300
200
100
Collector - Emitter voltage : VCE [ V ]
Vcc=300V, Ic=75A, Tj= 25°C
25
20
15
10
5
Gate - Emitter voltage : VG E [ V ]
100
0 5 10 15 20 25 30 35
Collector - Emitter voltage : VCE [ V ]
0
0 100 200 300 400 500
Gate ch arge : Qg [ nC ]
0
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