Fuji Electric 7MBR50VB120-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
7MBR50VB120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 50A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation P
GES ±20 V
I
C Continuous Tc=100°C 50
I
cp 1ms TC=80°C 100
-I
C 50
-I
c pulse 1ms 100
C 1 device 280 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage V
Collector current
Brake
Collector power dissipation P
Repetitive peak reverse voltage (Diode) V
GES ±20 V
I
C Continuous TC=80°C 35
I
CP 1ms TC =80°C 70
C 1 device 210 W
RRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Average output current I
Surge current (Non-Repetitive) I
2
Converter
I
t (Non-Repetitive) I2t 648 A2s
Junction temperature T
Operating junciton temperature
(under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
O 50Hz/60Hz, sine wave 50 A
FSM
10ms, Tj=150°C
half sine wave
j
jop
T
C 125
stg -40 ~ +125
Inverter, Brake 175
Converter 150
Inverter, Brake 150
Converter 150
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Maximum
ratings
360 A
Units
°C
A
A
1
1390a
MARCH 2014
7MBR50VB120-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
GES VGE = 0V, VGE = ±20V - - 200 nA
GE (th) VCE = 20V, IC = 50mA 6.0 6.5 7.0 V
T
CE (sat)
V
(terminal)
CE (sat)
V
(chip)
VGE = 15V
IC = 50A
VGE = 15V
IC = 50A
j=25°C - 2.20 2.65
T
j=125°C - 2.55 -
T
j=150°C - 2.60 -
T
j=25°C - 1.85 2.30
T
j=125°C - 2.20 -
T
j=150°C - 2.25 -
Internal gate resistance Rg(int) - - 4 - Ω
Input capacitance C
Inverter
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time t
Zero gate voltage collector current ICES
Gate-Emitter leakage current I
Collector-Emitter saturation voltage
Brake
ies VCE
t
on
t
r - 0.09 0.60
t
r (i) - 0.03 -
t
off - 0.53 1.00
t
f - 0.06 0.30
F
V
(terminal)
V
F
(chip)
rr IF = 50A - - 0.35 µs
= 10V, VGE = 0V, f = 1MHz - 4.2 - nF
VCC = 600V
IC = 50A
VGE = +15 / -15V
RG = 15Ω
Tj=25°C - 2.05 2.50
F = 50A
I
Tj=125°C - 2.20 -
Tj=150°C - 2.15 -
Tj=25°C - 1.70 2.15
F = 50A
I
Tj=125°C - 1.85 -
Tj=150°C - 1.80 -
VGE = 0V
VCE = 1200V
GES
CE (sat)
V
(terminal)
CE (sat)
V
(chip)
VCE = 0V
VGE = +20 / -20V
VGE = 15V
IC = 35A
VGE = 15V
IC = 35A
T
j=25°C - 2.10 2.55
T
j=125°C - 2.45 -
T
j=150°C - 2.50 -
T
j=25°C - 1.85 2.30
T
j=125°C - 2.20 -
T
j=150°C - 2.25 -
Internal gate resistance Rg(int) - - 0 - Ω
t
Turn-on time
Turn-off time
Reverse current I
Forward on voltage
Converter
Reverse current I
on
t
r - 0.09 0.60
t
off - 0.53 1.00
t
f - 0.06 0.30
RRM VR = 1200V - - 1.00 mA
FM
V
(chip)
RRM VR = 1600V - - 1.0 mA
Resistance R
Thermistor
B value B T = 25 / 50°C 3305 3375 3450 K
VCE = 600V
IC = 35A
VGE = +15 / -15V
RG = 27Ω
F = 50A
I
terminal - 1.70 2.15
chip - 1.35 -
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 0.39 1.20
- - 1.0 mA
- - 200 nA
- 0.39 1.20
Units
V
µs
V
V
µs
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Inverter IGBT - - 0.54
Thermal resistance (1device) R
Contact thermal resistance (1device) (*4) R
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
th(j- c)
th(c-f) with Thermal Compound - 0.05 -
Inverter FWD - - 0.73
Brake IGBT - - 0.72
Converter Diode - - 0.54
2
Characteristics
min. typ. max.
Units
°C/W
7MBR50VB120-50
8
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
j= 25°C / chip
T
100
VGE
=20V 15V
12V
75
50
25
Collector current: IC [A]
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE =15V / chip
100
j=25°C
T
75
[A]
j=125°C
T
Tj=150°C
10V
V
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 150°C / chip
100
V
GE
=20V
15V
12V
75
50
25
Collector current: IC [A]
10V
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: V
[V]
CE
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
j= 25°C / chip
T
8
[V]
CE
6
50
25
Collector current: IC
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE=0V, f= 1MHz, Tj= 25°C
10.0
ies
C
1.0
Cres
0.1
Coes
4
2
I
I
I
Collector - Emitter voltage: V
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
CC=600V, IC=50A, Tj= 25°C
V
V
CE
0
V
C=100A
C=50A
C=25A
GE
Capacitance: Cies, Coes, Cres [nF]
0.0
0 10 20 30
Collector - Emitter voltage: V
CE [V]
Gate - Emitter voltage: VGE [5V/div]
Collector - Emitter voltage: VCE [200V/div]
0050005-
Gate charge: Qg [nC]
3
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