Fairchild Semiconductor TIS97 Datasheet
TIS97
TIS97
Discrete POWER & Signal
Technologies
E
B
C
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 6. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
TIS97
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
625
5.0
mW
mW/°C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
h
fe
NF Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V
Collector Cutoff Current VCB = 40 V, IE = 0
= 60 V, IE = 0
V
CB
10
10
nA
µ
A
Emitter Cu toff Curre n t VEB = 6.0 V, IC = 0 20 nA
DC Cu r re n t Gai n
= 5.0 V, IC = 100 µA
V
CE
250 700
Base-Emitter On Voltage VCE = 5.0 V, IC = 100 µA 0.45 0.65 V
Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 1.0 4.0 pF
Emitt er - Bas e C ap acitanc e VEB = 0.5 V, f = 1.0 MHz 16 pF
Small-Si gnal Cu rr ent Gai n
= 100 µA, VCE = 5.0 V,
I
C
f = 1.0 kHz
= 10 mA, VCE = 5.0 V,
I
C
f = 10 0 M Hz
= 5.0 V, IC = 30 µA,
V
CE
= 10 kΩ, f = 1.0 kHz,
R
g
= 100 Hz
B
W
= 5.0 V, IC = 100 µA,
V
CE
= 10 kΩ, BW = 15.7 kHz
R
g
250
2.0
800
2.0
3.0
dB
dB
TIS97
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