Fairchild Semiconductor TIS93 Datasheet

TIS93

Discrete POWER & Signal

Technologies

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

CEO

CBO

EBO

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Collector-Emitter Voltage 40 V Collector-Base Voltage 40 V Em i t ter - Bas e V olt ag e 5. 0 V Collector Current - Continuous 800 mA Operating and Storage Junction Temperature Range -55 to +150

°C

Symbol Characteri st ic Max Units

TIS93

 1997 Fairchild Semiconductor Corporation

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 83.3 °C/W Thermal Resistance, Junction to Ambient 200 °C/W

625

5.0

mW/°C

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

ON CHARACTERISTICS*

sat

CE(

BE(on)

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

C ollector-E m i t ter Br eak down V oltage* IC = 10 mA, IB = 0 40 V C ollector-B ase Breakdo w n Volt age IC = 100 µA, IE = 0 40 V Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V Co llector Cutoff C u rre n t VCB = 20 V, IE = 0 100 nA Emitter Cu toff Cu r ren t VEB = 3.0 V, IC = 0 100 nA

DC Cu r re n t Gai n VCE = 2.0 V, IC = 50 mA 100 300 Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.25 V

)

Base-Emitter On Voltage VCE = 2.0 V, IC = 50 mA 0.6 1.0 V

TIS93