Fairchild Semiconductor TIP50, TIP49, TIP48, TIP47 Datasheet
TIP47/48/49/50
High Voltage and Switching Applications
• High Sustaining Voltage : V
• 1A Rated Collector Current
(sus) = 250 - 400V
CEO
TIP47/48/49/50
NPN Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
TO-220
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage : TIP47
Collector-Emitter Voltage : TIP47
Emitter-Base Voltage 5 V
Collector Current (DC) 1 A
Collector Current (Pulse) 2 A
Base Current 0.6 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
: TIP48
: TIP49
: TIP50
: TIP48
: TIP49
: TIP50
TC=25°C unless otherwise noted
350
400
450
500
250
300
350
400
V
V
V
V
V
V
V
V
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEX
: TIP47
: TIP48
: TIP49
: TIP50
ICEO
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
I
CEX
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
IEBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 V
CE
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
t
ON
t
STG
t
F
* Pulse Test: PW≤300µs, duty Cycleµ2% Pu lse
©2000 Fairchild Semiconductor International Rev. A, February 2000
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Turn ON Time VCC = 400V
Storage Time 3 µs
Fall Time 0.3 µs
= 30mA, IB = 0 250
I
C
300
350
400
V
= 150V, IB = 0
CE
= 200V, IB = 0
V
CE
V
= 250V, IB = 0
CE
= 300V, IB = 0
V
CE
V
= 350V, V
CE
= 400V, V
V
CE
V
= 450V, V
CE
= 500V, V
V
CE
= 5V, IC = 0 1 mA
EB
= 10V, IC = 0.3A
CE
= 10V, IC = 1A
V
CE
= 10V, IC = 1A 1.5 V
CE
=10V, IC = 0.2A 10 MHz
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
30
10
150
0.5 µs
5I
= -2.5IB2 = IC = 6A
B1
= 66.7Ω
R
L
1
1
1
1
1
1
1
1
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
Typical Characteristics
TIP47/48/49/50
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 4
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
500
µ
1ms
D.C
TIP47
TIP48
TIP49
TIP50
VCE = 10V
100
µ
S
S
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 4
VCE(sat)
IC = 5 I
B
IC[A], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
50
40
30
20
10
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Loading...