Fairchild Semiconductor SSF25N40A Datasheet

Advanced Power MOSFET

SSF25N40A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Low R

: 0.162 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

o

=25 )

C

=100 )

C

o

C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

o

C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O O

O O O

BV R I

= 400 V

DSS

= 0.2 Ω

DS(on)

= 14.3 A

D

TO-3PF

1

2

3

1.Gate 2. Drain 3. Source

400

14.3

9.1

1

2

1 1

3

100

+

_

30

1753

14.3 10

4.0

100

0.8

- 55 to +150

300

V A A

V

mJ

A

mJ

V/ns

W

W/

o

C

Thermal Resistance

Symbol Typ.

R

θ

JC

R

θ

JA

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

1.25 40

o

C

/W

Rev. B

SSF25N40A

Electrical Characteristics (T

o

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

BV/ T

∆ ∆

V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

gs

Q

gd

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge

g

Gate-Source Charge Gate-Drain( “Miller” ) Charge

400

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250 A

V

--

4.0

100

10

100

0.2

--

500 240

55 60

260

85

182

--

V

GS

o

I

V/

nA

µ

=250 A See Fig 7

C

D

V

A

Ω

pF

ns

=5V,ID=250 A

DS

V

=30V

GS

V

=-30V

GS

V

=400V

DS

V

=320V,TC=125

DS

=10V,ID=7.15A

V

GS

=50V,ID=7.15A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=200V,ID=25A,

DD

=5.3

R

G

See Fig 13

V

=320V,VGS=10V,

DS

nC

I

=25A

D

See Fig 6 & Fig 12

µ

--

0.52

--

14.28 3180

435 200

22 25

127

38

140

21

64.8

-100

4130

µ

o

C

4

O

4

O

Ω

5

O4O

5

O4O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=15mH, I

O

3

I

O

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=14.3A, VDD=50V, RG=27 , Starting TJ =25

AS

_

<

25A, di/dt 320A/ s, VDDBV

SD

<

µ

--

o

C

--

484

7.6

o

C

14.3 100

1.5

--

A V

ns

µ

C

--

1

--

O

4

--

O

--

Ω

_

<

, Starting TJ =25

DSS

µ

_

<

Integral reverse pn-diode in the MOSFET

o

T

=25 ,IS=14.3A,VGS=0V

C

J

o

C

T

=25 ,IF=25A

J

/dt=100A/ s

di

F

µ

O

4

N-CHANNEL

POWER MOSFET

SSF25N40A

2

10

1

10

0

, Drain Current [A]

10

D

I

-1

10

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

@ Notes :

1. 250

s Pulse Test

µ

2. T

= 25 oC

C

0

10

VDS , Drain-Source Voltage [V]

0.5

0.4

]

Ω

0.3

V

= 10 V

GS

, [

DS(on)

0.2

R

VGS = 20 V

0.1

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0.0 0 20 40 60 80 100

ID , Drain Current [A]

2

10

o

150

25 oC

C

@ Notes :

= 0 V

1. V

GS

2. V

- 55

o

C

3. 250

= 50 V

DS

s Pulse Test

µ

1

10

, Drain Current [A]

D

I

0

1

10

2 4 6 8 10

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

150 oC

, Reverse Drain Current [A]

DR

0

I

10

25 oC

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

, Source-Drain Voltage [V]

V

SD

@ Notes :

1. V

= 0 V

GS

2. 250 µs Pulse Test

5000

C

4000

iss

3000

2000

C

oss

Capacitance [pF]

C

1000

0

10

rss

0

VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

1

10

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

DS

= 80 V

DS

= 200 V

10

VDS = 320 V

5

, Gate-Source Voltage [V]

GS

V

0

0 30 60 90 120 150

@ Notes : ID = 25.0 A

QG , Total Gate Charge [nC]

Fairchild Semiconductor SSF25N40A Datasheet

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