Fairchild Semiconductor SSD2011A Datasheet
Dual P-CHANNEL POWER MOSFET
SSD2011A
FEATURES
! Lower R
! Improved Inductive Ruggedness
! Fast Switching Times
! Low Input Capacitance
! Extended Safe Operating Area
! Improved High Temperature Reliability
DS(ON)
Product Summary
Part Number BV
DSS
SSD2011A - 60V 0.280
RDS(on) I
Ω
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
V
DSS
I
D
I
DM
V
GS
P
D
T
, T
J
STG
Drain-to-Source Voltage
Continuous Drain Current T
Continuous Drain Current T
Drain Current-Pulsed (2)
Gate-to-Source Voltage
Total Power Dissipation ( T
Operating and Junction Storage
Temperature Range
D
-2.0A
=25℃
A
=70℃
A
=25℃ )
A
( T
=70℃ )
A
8 SOIC
- 55 to +150
1
S
1
2
G
1
3
S
2
4
G
2
Top View
G1, G
2
S1, S
P-Channel MOSFET
-60
-2.0
-1.6
- 10.0
±20
2.0
1.3
8
D
1
7
D
1
6
D
2
5
D
2
D2D
1
▲
◀
2
V
A
A
V
W
℃
Thermal Resistance
R
θJA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Ambient
-- 62.5
℃/W
Rev. A
SSD2011A
Dual P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
V
I
I
I
R
t
t
GS(th)
GSS
DSS
DON
DS(on)
g
d(on)
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
On-State Drain-Source Current
Static Drain-Source
On-State Resistance ②
Forward Transconductance ②
fs
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain (“Miller”) Charge
gd
(TC=25℃ unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
-60
-1.0
--
--
--
--
-10
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
5.0
7.0
16
37
17
16
2.2
4.0
--
--
-100
100
-2.0
-25
--
0.28
0.5
-25
30
60
40
30
--
--
V
V
nA
nA
μA
AV
Ω
S
ns
nC
=0V,ID=-250μA
GS
V
= -5V ,ID=-250μA
DS
V
=-20V
GS
V
=20V
GS
V
=-40V
DS
VDS=-40V,TJ=55℃
=-5V, VGS=-10V
DS
V
=-10V,ID=-2.0A
GS
V
=-4.5V,ID=-1.6A
GS
VDS=-15V,ID=-2.0A
VDD=-30V,ID=-1.0A,
R
=6.0Ω,
0
V
=-30V,VGS=-10V,
DS
ID=-2.0A ②③
②③
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
Continuous Source Current
I
S
(Body Diode)
V
Diode Forward Voltage ②
SD
Reverse Recovery Time ②
t
rr
Notes ;
① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycl e ≤ 2%
③ Essentially Independent of Operating Temperature
--
--
-2.0
--
--
--
--
--
100
-1.2
--
--
--
Modified MOSFET Symbol
Showing the Integral Reverse
A
P-N Junction Rectifier
V
TA=25℃,IS=-2.0A,VGS=0V
ns
T
=25℃,IF=-2.0A,diF/dt=100A/μs
A
D
○
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G
││││
S
○
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