Fairchild Semiconductor SSD2007A Datasheet
Dual N-CHANNEL POWER MOSFET
SSD2007A
FEATURES
! Extremely Lower R
! Improved Inductive Ruggedness
! Fast Switching Times
! Rugged Polysilicon Gate Cell Structure
! Low Input Capacitance
! Extended Safe Operating Area
! Improved High Temperature Reliability
! Surface Mounding Package : 8SOP
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
T
, T
J
STG
T
L
Drain-to-Source Voltage(1)
Drain-Gate Voltage(R
=1.0MΩ)(1)
GS
Gate-to-Source Voltage
Continuous Drain Current T
Continuous Drain Current TA=100℃
Drain Current-Pulsed (2)
Total Power Dissipation T
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/16” from case for 5 seconds
A
T
A
=25℃
A
=25℃
=70℃
8 SOP
G1 ,G
- 55 to +150
1
S
1
2
G
1
3
S
2
4
G
2
Top View
D1,D
2
N-Channel MOSFET
▼
▼
▼
50
50
±20
2.0
1.6
8.0
2.0
1.3
300
8
D
1
7
D
1
6
D
2
5
D
2
D1,D
S1 ,S
2
▼
2
2
V
V
V
A
A
V
W
℃
Notes ;
(1) T
℃ to 150℃
= 25
J
(2) Repetitive Rating : Pulse Wi dth Lim i ted by Max. Junction Temperature
Rev. A
SSD2007A
Dual N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
V
I
I
I
R
t
t
GS(th)
GSS
DSS
DON
DS(on)
g
d(on)
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
On-State Drain-Source Current(2)
Static Drain-Source
On-State Resistance(2)
Forward Transconductance
fs
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain (“Miller”) Charge
gd
(TA=25℃ unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
600
2.0
--
--
--
--
8.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2.5
--
--
--
--
--
1.0
2.0
--
4.0
1.0
-1.0
2
25
--
0.3
0.5
--
40
70
100
70
15
--
--
V
V
μA
μA
μA
AV
Ω
S
ns
nC
=0V,ID=250μA
GS
V
= VGS,ID=250μA
DS
V
=20V
GS
V
=-20V
GS
V
=50V
DS
VDS=40V,TJ=55℃
=10V,VDS=5V
GS
V
=10V,ID=1.5A
GS
V
=5.0V,ID=0.6A
GS
VDS≥15V,ID=2.0A
VDD=30V,ID=0.6A,
Z
=6.0Ω,
0
V
=25V,VGS=10V,
DS
ID=1.3A
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJA
Notes ;
(1) T
(2) Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
℃ to 150℃
= 25
J
Junction-to-Ambient
-- 62.5
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
Continuous Source Current
I
S
(Body Diode)
V
Diode Forward Voltage(2)
SD
Reverse Recovery Time
t
rr
--
--
1.8
--
--
--
--
--
--
--
1.2
--
100
Modified MOSFET Symbol
Showing the Integral Reverse
A
P-N Junction Rectifier
V
TJ=25℃,IS=1.25A,VGS=0V
ns
T
=25℃,IF=2.5A,diF/dt=100A/μs
J
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G
℃/W
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D
S