Fairchild Semiconductor SS9015 Datasheet
SS9015
Low Frequency, Low Noise Amplifier
• Complement to SS9014
SS9015
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage -50 V
Collector-Emitter Voltage -45 V
Emitter-Base Voltage -5 V
Collector Current -100 A
Collector Dissipation 450 W
Junction Temperature 150
Storage Temperature -55 ~ 150
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Base Saturation Voltage IC = -100mA, IB = -5mA -0.2 -0.7
V
CE
(sat) Base-Emitter Saturation Voltage IC = -100mA, IB = -5mA -0.82 -1.0 V
V
BE
(on) Base-Emitter On Voltage V
V
BE
C
ob
f
T
NF Noise Figure V
Collector-Base Breakdown Voltage IC = -100µA, IE =0 -50 V
Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -45 V
Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
= -50V, IE =0 -50 nA
CB
= -5V, IC =0 -50 nA
EB
= -5V, IC = -1mA 60 200 600
CE
= -5V, IC = -2mA -0.6 -0.65 -0.75 V
CE
= -10V, IE =0
CB
f=1MHz
= -5V, IC = -10mA 100 190 MHz
CE
= -5V, IC = -0.2mA
CE
f=1KHz, R
S
=1K
°
°
4.5 7.0 pF
0.7 10 dB
Ω
C
C
h
Classification
FE
Classification A B C
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 150 100 ~ 300 200 ~ 600
Typical Characteristics
SS9015
-50
IB = -400 uA
-40
IB = -350 uA
-1000
IB = -300 uA
-30
-20
-10
[mA], COLLECTOR CURRENT
C
I
-0
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
VCE [V], COLLECTOR-EMITTER VOLTAGE
IB = -250 uA
IB = -200 uA
IB = -150 uA
IB = -100 uA
IB = -50 uA
-100
, DC CURRENT GAIN
FE
h
-10
-0.1 -1 -10 -100 -1000
IC [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-1000
VBE (sat)
-100
(SAT)[mV], SATURATION VOLTAGE
CE
(SAT), V
BE
-10
V
-0.1 -1 -10 -100
VCE (sat)
Ic [mA], COLLECTOR CURRENT
IC = 20 I
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE [V], BASE-EMITTER VOLTAGE
VCE = -5V
VCE = -5V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Cob [pF], OUTPUT CAPACITANCE
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gian Bandwidth Product
©2000 Fairchild Semiconductor International
f = 1 MHz
I
= 0
E
Figure 4. Base-Emitter On Vo ltage
1000
100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
10
-1 -10
IC [mA], COLLECTOR CURRENT
VCE = -6V
Rev. A, February 2000
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