Fairchild Semiconductor SS9012 Datasheet
SS9012
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
• High total power dissipation. (PT=625mW)
• High Collector Current. (I
• Complementary to SS9013
• Excellent h
linearity.
FE
PNP Epitaxial Silicon Transistor
= -500mA)
C
1
1. Emitter 2. Base 3. Collector
TO-92
SS9012
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.18 -0.6 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.95 -1.2 V
V
BE
(on) Base-Emitter On Voltage V
V
BE
h
FE
Collector-Base Breakdown Voltage IC = -100µA, IE =0 -40 V
Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V
Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Classification
Classification D E F G H
h
FE1
64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= -25V, IE =0 -100 nA
CB
= -3V, IC =0 -100 nA
EB
= -1V, IC = -50mA
CE
V
= -1V, IC = -500mA
CE
= -1V, IC = -10mA -0.6 -0.67 -0.7 V
CE
64
40
120
90
202
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
Typical Characteristics
SS9012
-50
-40
IB=-300µA
IB=-250µA
IB=-200µA
-30
-20
-10
[mA], COLLECTOR CURRENT
C
I
-0
-0 -10 -20 -30 -40 -50
IB=-150µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-1000
-100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
-10
BE
V
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB=-100µA
IB=-50µA
IC=10I
1000
100
, DC CURRENT GAIN
FE
h
10
-10 -100 -1000
VCE = -1V
IC[mA], COLLECTOR CURRENT
1000
100
10
B
1
-1 -10 -100 -1000 -10000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
VCE=-6V
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
Figure 4. Current Gain Bandwidth Product
Rev. A4, November 2002
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