Fairchild Semiconductor SS8550 Datasheet
SS8550
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8050
• Collector Current: I
• Collector Power Dissipation: P
PNP Epitaxial Silicon Transistor
=1.5A
C
=2W (TC=25°C)
C
1
TO-92
1. Emitter 2. Base 3. Collector
SS8550
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage -40 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -6 V
Collector Current -1.5 A
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
(sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V
CE
(sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V
V
BE
(on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 V
V
BE
C
ob
f
T
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -6 V
Collector Cut-off Current VCB= -35V , IE=0 -100 nA
Emitter Cut-off Current VEB= -6V, IC=0 -100 nA
DC Current Gain VCE= -1V, IC= -5mA
V
= -1V, IC= -100mA
CE
= -1V, IC= -800mA
V
CE
Output Capacitance VCB= -10V , IE=0
45
85
40
170
160
300
80
15 pF
f=1MHz
Current Gain Bandwidth Product VCE= -10V , IC= -50mA 100 200 MHz
hFEClassification
Classification B C D
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
85 ~ 160 120 ~ 200 160 ~ 300
Typical Characteristics
SS8550
-0.5
-0.4
-0.3
-0.2
-0.1
[mA], COLLECTOR CURRENT
C
I
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10000
-1000
-100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
-10
V
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
V
BE(sat)
V
CE(sat)
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IC=10I
1000
VCE = -1V
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = -1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f=1MHz
=0
I
E
1000
100
10
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE=-10V
Rev. A2, November 2002
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