Fairchild Semiconductor SS8050 Datasheet
SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I
• Collector Power Dissipation: P
=1.5A
C
=2W (TC=25°C)
C
SS8050
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 6 V
Collector Current 1.5 A
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
(sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.28 0.5 V
CE
(sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 0.98 1.2 V
V
BE
(on) Base-Emitter On Voltage VCE=1V, IC=10mA 0.66 1 V
V
BE
C
ob
f
T
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
Collector Cut-off Current VCB=35V, IE=0 100 nA
Emitter Cut-off Current VEB=6V, IC=0 100 nA
DC Current Gain VCE=1V, IC=5mA
Output Capacitance VCB=10V, IE=0
Current Gain Bandwidth Product VCE=10V, IC=50mA 100 190 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=1V, IC=100mA
CE
=1V, IC=800mA
V
CE
f=1MHz
45
85
40
135
160
300
110
9.0 pF
hFE Classification
Classification B C D
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
85 ~ 160 120 ~ 200 160 ~ 300
Typical Characteristics
SS8050
0.5
0.4
0.3
0.2
0.1
[mA], COLLECTOR CURRENT
C
I
0 0.4 0.8 1.2 1.6 2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10000
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
0.1 1 10 100 1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
IC = 10 I
1000
VCE = 1V
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
100
B
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE = 1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
1000
IE = 0
f = 1MHz
100
[MHz],
T
f
10
CURRENT GAIN BANDWIDTH PRODUCT
1
1 10 100 400
IC[mA], COLLECTOR CURRENT
VCE = 10V
Rev. A2, November 2002
Loading...