Fairchild Semiconductor SS39, SS38, SS36, SS35, SS34 Datasheet
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Features
Metal to silicon rectifiers, majority
•
carrier conduction.
• Low forward voltage drop.
• Easy pick and place.
• High surge current capability .
SS32 - S310
SMC/DO-214AB
0.124 (3. 150)
0.108 (2. 743)
SS32-S310
0.280 (7. 112)
0.260 (6. 604)
2
0.320 (8. 128)
0.305 (7. 747)
1
0.245 (6. 223)
0.220 (5. 588)
0.103 (2. 616)
0.079 (2. 007)
0.060 (1. 524)
0.030 (0. 762)
0.008 (0. 203)
0.004 (0. 102)
0.012 (0.305)
0.006 (0.152)
3.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JC
T
stg
T
J
Average Rectified Current
= 75°C
@ T
A
Peak Forward Surge Current
8.3 ms single hal f-sine-wave
Superimposed on rat ed l oad (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction t o A mbient** 55
Thermal Resistance, Junction t o Case 17
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).
Electrical Characteristics T
Parameter Device Units
32 33 34 35 36 38 39 310
Peak Repetitive Reverse Volt age 20 30 40 50 60 80 90 100 V
Maximum RMS Voltage 1421283542566370 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current TA = 25°C
@ rated V
R
TA = 100°C
Maximum Forward Voltage @ 3.0 A 500 750 850 mV
20 30 40 50 60 80 90 100 V
= 25°C unless otherwise noted
A
3.0 A
100 A
2.27
18
= 25°C unless otherwise noted
A
0.5 mA
20 10 mA
W
mW/°C
°
C/W
°
C/W
°
C
°
C
1999 Fairchild Semiconductor Corporation
SS32 - S310, Rev. B1
T ypical Characteristics
SS32-S310
Surface Mount Schottky Barrier Rectifiers
(continued)
Forward Current Derating Curve
3
2
RESISTIVE OR
INDU C T IVE L OAD
P.C.B. MOUNTED
1
ON 0.55 x 0.55"
(14 x 14) mm
COPPE R P AD ARE AS
FORWARD CURRE NT (A)
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
º
Forward Charact eristics
50
T = 125 C
º
A
SS32-SS34
10
1
T = 150 C
0.1
FORWARD CURRE NT (A)
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
A
Pulse Width = 300µS
2% Duty Cycle
FORWARD VOL TAGE (V)
T = 25 C
º
A
SS35-S310
º
Non-Repetitive Surge Curre nt
100
80
60
40
20
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBE R OF CY CL E S AT 60Hz
Reverse Characteris tics
20
10
SS32-SS34
T = 125 C
º
1
SS35-S310
0.1
0.01
REVERSE CURRENT (mA)
0.001
PERCENT OF RATED PEAK RE VER SE VOLTAGE (%)
SS32-SS34
SS35-S310
0 20406080100120140
A
º
T = 75 C
A
º
T = 25 C
A
Typical Junction Capacitance
1000
SS32-SS34
SS35-S310
100
JUNCTIO N CAP ACI TAN CE (pF)
10
0.1 1 10 100
REVERSE VOLTAGE (V)
Transient Thermal Impedance
100
º
10
1
0.1
0.01 0.1 1 10 100
TRANSIEN T THE R MA L I MP EDANCE ( C/W)
T. PULSE DU RA TION (sec .)
SS32 - S310, Rev. B1
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