Fairchild Semiconductor SFI9Z24 Datasheet

SFW/I9Z24

BV

DSS

= -60 V

R

DS(on)

= 0.28

ID= -9.7 A

-60

-9.7

-6.8

-40

±30

161

-9.7

4.9

-5.5

3.8 49

0.33

- 55 to +175

300

3.06 40

62.5

--

Ω

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175

o

C Operating Temperature

n Lower Leakage Current : 10 µA(Max.) @ V

DS

= -60V

n Low R

DS(ON)

: 0.206 Ω (Typ.)

Advanced Power MOSFET

Thermal Resistance

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

R

θJC

R

θJA

R

θJA

o

C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

D2-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I2-PAK

*

When mounted on the m i nimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage Continuous Drain Current (T

C

=25oC)

Continuous Drain Current (T

C

=100oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

A

=25oC)

Total Power Dissipation (T

C

=25oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

I

D

T

J

, T

STG

T

L

A V

mJ

A

mJ

V/ns

W W

W/

o

C

A

o

C

V

DSS

V

*

O

1

O

2

O

3

O

1

O

1

Rev. C

SFW/I9Z24

-60

--

-2.0

--

-0.04

--

140

40 11 21 29 20 15

2.9

6.0

--

-4.0

-100 100

-10

-100

0.28

-600 215

60 30 50 65 50 19

--

4.1

465

--

80

0.22

-9.7

-40

-3.8

--

Notes ;

Repetitive Rating : Puls e Wi dt h Limi ted by Maximum Junction Temperature L=2.0mH, I

AS

=-9.7A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

I

SD

-9.7A, di/dt 250A/µs, V

DD

BV

DSS

, Starting TJ =25oC Pulse Test : Pulse Width = 250µs, Duty Cycle 2% Essentially Independent of Operating Temperature

_

<

O

1

O

2

O

3

O

4

O

5

_

<

_

<

_

<

P-CHANNEL

POWER MOSFET

Electrical Characteristics

(TC=25oC unless otherwise specified)

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

∆BV/∆T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/oC

V

nA

µA

Ω

pF

ns

nC

--

V

GS

=0V,ID=-250µA

I

D

=-250µA See Fig 7

V

DS

=-5V,ID=-250µA

V

GS

=-20V

V

GS

=20V VDS=-60V V

DS

=-48V,TC=150oC

V

GS

=-10V,ID=-4.9A VDS=-30V,ID=-4.9A

V

DD

=-30V,ID=-9.7A, R

G

=18

See Fig 13

V

DS

=-48V,VGS=-10V, I

D

=-9.7A

See Fig 6 & Fig 12

Drain-to-Source Leakage Current

VGS=0V,VDS=-25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V ns µC

Integral reverse pn-diode in the MOSFET T

J

=25oC,IS=-9.7A,VGS=0V

T

J

=25oC,IF=-9.7A

di

F

/dt=100A/µs

Ω

O

4

O

5

O

4

O

4

O

5

O

4

O

4

O

4

O

1

S

SFW/I9Z24

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

V

GS

Top : - 1 5 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V Bottom : - 4.5 V

-I

D

, Drain Current [A]

-VDS , Drain-Source Voltage [V]

246810

10

-1

10

0

10

1

25 oC

175 oC

- 55 oC

@ Notes :

1. V

GS

= 0 V

2. V

DS

= -30 V

3. 250

µ

s Pulse Test

-I

D

, Drain Current [A ]

-VGS , Gate-Source Vo ltage [V]

0.5 1.0 1.5 2.0 2.5 3.0 3.5

10

-1

10

0

10

1

175 oC

25 oC

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

-I

DR

, Reverse Drain Current [A]

-VSD , Source-Drain Voltage [V]

10

0

10

1

0

200

400

600

800

C

iss

= Cgs+ Cgd ( Cds= shorted )

C

oss

= Cds+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-VDS , Drain-Source Voltage [V]

0481216

0

5

10

VDS = -48 V

VDS = -30 V

VDS = -12 V

@ Notes : ID =-9.7 A

-V

GS

, Gate-Source Voltage [V]

QG , Total Gate Charge [nC]

0 5 10 15 20 25 30 35 40

0.10

0.15

0.20

0.25

0.30

0.35

0.40

@ Note : TJ = 25 oC

VGS = -20 V

VGS = -10 V

R

DS(on)

, [

Ω

]

Drain-Source On-Resistance

-ID , Drain Current [A]

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fi g 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFi g 3. On-Resistance vs. Drain Current