Fairchild Semiconductor SFI9640, SFW9640 Datasheet

Advanced Power MOSFET

SFW/I9640

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low R

: 0.344 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T Total Power Dissipation (T

=25oC)

A

=25oC)

C

*

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds

O

O O O O

BV R I

1

-200

-11

-7.0

1

2

1 1

3

-44

+

_

807

-11

12.3

-5.0

3.1

123

0.98

= -200 V

DSS

= 0.5 Ω

DS(on)

= -11 A

D

D2-PAK

3

1. Gate 2. Drain 3. Source

2

1

I2-PAK

2

3

V A A

30

V

mJ

A

mJ

V/ns

W W

o

W/

C

- 55 to +150

o

C

300

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

*

When mounted on the minimum pad size recommended (PCB Mount).

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

1.02 40

62.5

o

C/W

Rev. B

SFW/I9640

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol

BV ∆BV/∆T V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “ Miller “ ) Charge

gd

=25oC unless otherwise specified)

C

Max. UnitsTyp.Min. Test Condition

V

-200

--

-2.0

--

-0.16

--

6.5

1220

207

81 16 23 54 19 46

9.2

22.9

-4.0

-100 100

-100

1585

--

-10

0.5

--

310 120

40 55

115

50 59

--

V

GS

o

I

V/

nA

µA

nC

=-250µA See Fig 7

C

D

V

DS

V

GS

V

GS

V

DS

V

DS

V

Ω

GS

V

Ω

DS

V

GS

pF

ns

See Fig 5

V

DD

=9.1Ω

R

G

V

DS

I

=-11A

D

See Fig 6 & Fig 12

=0V,ID=-250µA

=-5V,ID=-250µA =-30V =30V =-200V =-160V,TC=125oC

=-10V,ID=-5.5A =-40V,ID=-5.5A

O O

4

=0V,VDS=-25V,f =1MHz

=-100V,ID=-11A,

See Fig 13

O

4

O

=-160V,VGS=-10V,

O4O

5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=10mH, I

O

3

I

O

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-11A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

-11A, di/dt 450A/µs, VDDBV

<

SD

_

<

--

180

1.24

-11

-44

-5.0

--

A

V ns µC

--

1

--

O

4

--

O

--

_

<

, Starting TJ =25oC

DSS

_

<

Integral reverse pn-diode in the MOSFET T

=25oC,IS=-11A,VGS=0V

J

T

=25oC,IF=-11A

J

/dt=100A/µs

di

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 15 V

- 10 V

- 8.0 V

1

- 7.0 V

10

- 6.0 V

- 5.5 V

- 5.0 V Bottom : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

1.50

-VDS , Drain-Source Voltage [V]

10

@ Notes :

1. 250

2. T

0

s Pulse Test

µ

= 25 oC

C

SFW/I9640

1

10

o

C

150

0

10

o

25

, Drain Current [A]

D

-I

1

10

C

o

- 55

-1

2 4 6 8 10

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

@ Notes :

= 0 V

1. V

GS

2. V

= -40 V

DS

3. 250

s Pulse Test

C

µ

1.25

]

Ω

1.00

, [

= -10 V

V

DS(on)

R

0.75

GS

0.50

Drain-Source On-Resistance

0.25

0.00 0 7 14 21 28 35 42

VGS = -20 V

-ID , Drain Current [A]

2500

2000

C

iss

1500

C

oss

1000

C

Capacitance [pF]

rss

500

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

-VDS , Drain-Source Voltage [V]

@ Note : TJ = 25 oC

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

0

10

, Reverse Drain Current [A]

DR

-I

10

150 oC

o

25

C

-1

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

, Source-Drain Voltage [V]

-V

SD

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

µ

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= -40 V

V

10

DS

= -100 V

V

DS

VDS = -160 V

5

, Gate-Source Voltage [V]

GS

-V

0

0 10 20 30 40 50

@ Notes : ID =-11 A

QG , Total Gate Charge [nC]