Fairchild Semiconductor SFI9634 Datasheet

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low R

DS(ON)

: 0.876 Ω (Typ.)

Advanced Power MOSFET

Thermal Resistance

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

R

θJC

R

θJA

R

θJA

o

C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

D2-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I2-PAK

*

When mounted on the minimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage Continuous Drain Current (T

C

=25oC)

Continuous Drain Current (T

C

=100oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

A

=25oC)

Total Power Dissipation (T

C

=25oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

I

D

T

J

, T

STG

T

L

A V

mJ

A

mJ

V/ns

W W

W/

o

C

A

o

C

V

DSS

V

*

O

1

O

2

O

3

O

1

O

1

SFW/I9634

BV

DSS

= -250 V

R

DS(on)

= 1.3

I

D

= -5.0 A

-250

-5.0

-3.3

-20

313

-5.0

7.0

-4.8

3.1 70

0.56

- 55 to +150

300

1.79 40

62.5

--

Ω

30

+

_

Rev. B

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

C

=25oC unless otherwise specified)

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “ ) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

∆BV/∆T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/

o

C

V

nA

µA

Ω Ω

pF

ns

nC

--

V

GS

=0V,ID=-250µA

I

D

=-250µA See Fig 7

V

DS

=-5V,ID=-250µA

V

GS

=-30V

V

GS

=30V

V

DS

=-250V

V

DS

=-200V,TC=125oC

V

GS

=-10V,ID=-2.5A

V

DS

=-40V,ID=-2.5A

V

DD

=-125V,ID=-5.0A,

R

G

=12 Ω

See Fig 13

V

DS

=-200V,VGS=-10V,

I

D

=-5.0A

See Fig 6 & Fig 12

Drain-to-Source Leakage Current

V

GS

=0V,VDS=-25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V ns µC

Integral reverse pn-diode in the MOSFET T

J

=25oC,IS=-5.0A,VGS=0V

T

J

=25oC,IF=-5.0A

di

F

/dt=100A/µs

O

4

O

4

O

5

O

4

O4O

5

O

1

O

4

O

4

SFW/I9634

-250

--

-2.0

--

-0.22

--

110

45 13 20 40 16 29

5.4

15.5

--

-4.0

-100 100

-10

-100

1.3

-975 165

65 35 50 90 40 37

--

3.6

750

--

170

1.17

-5.0

-20

-5.0

--

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=20mH, I

AS

=-5.0A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

I

SD

-5.0A, di/dt 400A/µs, V

DD

BV

DSS

, Starting TJ =25oC Pulse Test : Pulse Width = 250µs, Duty Cycle 2% Essentially Independent of Operating Temperature

<

_

<

_

<

_

<

_

O

1

O

2

O

3

O

4

O

5

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

SFW/I9634

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250

µ

s Pulse Test

2. T

C

= 25 oC

V

GS

Top : - 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V Bottom : - 4.5 V

-I

D

, Drain Current [A]

-VDS , Drain-Source Voltage [V]

2 4 6 8 10

10

-1

10

0

10

1

25 oC

150

o

C

- 55

o

C

@ Notes :

1. V

GS

= 0 V

2. V

DS

= -40 V

3. 250

µ

s Pulse Test

-I

D

, Drain Current [A]

-VGS , Gate-Source Voltage [V]

0 3 6 9 12 15 18 21

0.0

0.5

1.0

1.5

2.0

2.5

3.0

@ Note : TJ = 25 oC

VGS = -20 V

V

GS

= -10 V

R

DS(on)

, [

Ω

]

Drain-Source On-Resistance

-ID , Drain Current [A]

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

10

-1

10

0

10

1

150 oC

25

o

C

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

-I

DR

, Reverse Drain Current [A]

-VSD , Source-Drain Voltage [V]

0 5 10 15 20 25 30

0

5

10

VDS = -200 V

V

DS

= -125 V

V

DS

= -50 V

@ Notes : ID =-5.0 A

-V

GS

, Gate-Source Voltage [V]

QG , Total Gate Charge [nC]

10

0

10

1

0

500

1000

1500

C

iss

= Cgs+ Cgd ( Cds= shorted )

C

oss

= Cds+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-VDS , Drain-Source Voltage [V]