Fairchild Semiconductor SFI9540 Datasheet

Advanced Power MOSFET

SFW/I9540

FEATURES

n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area

o

n 175

C Operating Temperature

n Lower Leakage Current : 10 µA(Max.) @ V
n Low R

: 0.161 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T

=25oC)

A

=25oC)

C

Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds

1/8”

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS
AS

AR

D

STG

L

= -100V

DS

*

O
O

O
O
O

BV
R

DS(on)

DSS

= -100 V

= 0.2

Ω

ID= -17 A

D2-PAK

1

3

1. Gate 2. Drain 3. Source

-100

-17

-12

1

2

1
1

3

-68
±30
578

-17

13.2

-6.5

3.8
132

0.88

- 55 to +175

300

2

1

I2-PAK

2

3

V
A
A

V

mJ

A

mJ

V/ns

W
W

W/

o

C

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

When mounted on the mi nimum pad size recommended (PCB Mount).

*

Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient

*

--

--

--

1.14
40

62.5

o

C/W

Rev. C

SFW/I9540

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “Miller” ) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-100

--

-2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

-0.11

--

--

--

--

--

--

9.5

1180

240

83
14
22
45
26
43

7.4

17.8

--

--

-4.0

-100
100

-10

-100

0.2

--

1535

360
125

40
55

100

60
54

--

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-20V

GS

V

=20V

GS

VDS=-100V
V

=-80V,TC=150oC

DS

=-10V,ID=-8.5A

V

GS

=-40V,ID=-8.5A

V

DS

VGS=0V,VDS=-25V,f =1MHz

VDD=-50V,ID=-17A,
R

=12

G

See Fig 13

V

=-80V,VGS=-10V,

DS

I

=-17A

D

See Fig 6 & Fig 12

See Fig 5

Ω

O

O

4

O

4

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature

1

O

2

L=3.0mH, I

O

3

I

O

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-17A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-17A, di/dt 450A/µs, VDDBV

SD

_

<

_

<

, Starting TJ =25oC

DSS

O
O

--

1

4

_

<

--

--

--

-­135

--

0.7

--

-68

-4.0

--

--

A

V
ns
µC

-17

--

Integral reverse pn-diode
in the MOSFET
T

=25oC,IS=-17A,VGS=0V

J

T

=25oC,IF=-17A

J

di

/dt=100A/µs

F

O

4