Fairchild Semiconductor SFI9520, SFW9520 Datasheet

Advanced Power MOSFET

SFW/I9520

FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area

o

n 175

C Operating Temperature

n Lower Leakage Current : 10 µA(Max.) @ V n Low R

: 0.444 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T Total Power Dissipation (T

=25oC)

A

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS AS

AR

D

STG

L

= -100V

DS

*

O

O O O O

BV R

DS(on)

DSS

= -100 V

= 0.6

Ω

ID= -6.0 A

D2-PAK

1

3

1. Gate 2. Drain 3. Source

-100

-6.0

-4.0

1

2

1 1

3

-24 ±30 144

-6.0

4.9

-6.5

3.8

49

0.33

- 55 to +175

300

2

1

I2-PAK

2

3

V A A

V

mJ

A

mJ

V/ns

W W

W/

o

C

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

When mounted on the mi nimum pad size recommended (PCB Mount).

*

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

3.06 40

62.5

o

C/W

Rev. C

SFW/I9520

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-100

--

-2.0

--

-0.1

--

3.6

425

90 31 11 21 34 18 16

3.1

6.3

--

-4.0

-100 100

-10

-100

0.6

-550 135

45 30 50 80 45 20

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-20V

GS

V

=20V

GS

VDS=-100V V

=-80V,TC=150oC

DS

=-10V,ID=-3A

V

GS

VDS=-40V,ID=-3A VGS=0V,VDS=-25V,f =1MHz

=-50V,ID=-6A,

V

DD

R

=18

G

See Fig 13

V

=-80V,VGS=-10V,

DS

I

=-6A

D

See Fig 6 & Fig 12

See Fig 5

Ω

O

4

O

4

O

4

5

O

4

O5O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

1

Repetitive Rating : Pulse Wi dt h Limi t ed by Maximum Junction Temperature

O

2

L=6.0mH, I

O

3

I

O

SD

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-6A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-6A, di/dt 350A/µs, V

_

<

_

<

DD BVDSS

--

1

--

O

4

--

O

--

, Starting TJ =25oC

_

<

--

105

0.4

-6

-24

-3.8

--

A

V ns µC

Integral reverse pn-diode in the MOSFET T

=25oC,IS=-6A,VGS=0V

J

T

=25oC,IF=-6A

J

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 1 5 V

1

- 1 0 V

10

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V Bo tto m : - 4 .5 V

SFW/I9520

1

10

0

10

, Drain Current [A ]

D

-I

-1

10

-1

10

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

-VDS , Drain-Source Voltage [V]

2.5

2.0

]

Ω

1.5

, [

DS(on)

R

1.0

Drain-Source On-Resistance

0.5

0.0 0 4 812162024

VGS = -10 V

VGS = -20 V

@ Note : TJ = 25 oC

-ID , Drain Current [A ]

800

600

C

iss

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

175 oC

0

10

, Drain Current [A ]

D

-I

25 oC

- 55 oC

-1

1

10

246810

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= -40 V

DS

s Pulse Test

µ

-VGS , Gate-Source Vo ltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

175 oC

, Reverse Drain C urrent [A]

DR

-I

-1

10

25 oC

0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

µ

-VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

VDS = -20 V

VDS = -50 V

VDS = -80 V

400

C

oss

@ Notes :

1. V

Capacitance [pF]

C

rss

200

0

10

1

10

= 0 V

GS

2. f = 1 MHz

-VDS , Drain-Source Voltage [V]

5

, Gate-Source Vo ltage [V]

GS

-V

0

0 3 6 9 12 15 18

QG , Total Gate Char ge [nC]

@ Notes : ID =-6.0 A