Fairchild Semiconductor SFH9240 Datasheet

Advanced Power MOSFET

SFH9240

FEATURES

! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA(Max.) @ V
! Lower R

: 0.344 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T

=25oC)

C

Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 ” from case for 5-seconds

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS
AS

AR

D

STG

L

= -200V

DS

O

O
O
O
O

BV
R

DS(on)

DSS

= -200 V

= 0.5 Ω

ID= -11 A

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

-200

-11

-7.7

1

2

1
1

3

-44

+

_

30

807

-11

12.6

-5.0
126

1.0

- 55 to +150

300

V
A
A

V

mJ

A

mJ

V/ns

W

W/

o

o

C

C

Thermal Resistance

R

θJC

R

θCS

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.24

--

1.0

--

40

o

C/W

Rev. A

SFH9240

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “ Miller “ ) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-200

--

-2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

-0.16

--

--

--

--

--

--

6.5

1220

207

81
16
23
54
19
46

9.2

22.9

--

--

-4.0

-100
100

-10

-100

0.5

--

1585

310
120

40
55

115

50
59

--

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-30V

GS

V

=30V

GS

VDS=-200V
V

=-160V,TC=125oC

DS

=-10V,ID=-5.5A

V

GS

=-40V,ID=-5.5A

V

DS

VGS=0V,VDS=-25V,f =1MHz

VDD=-100V,ID=-11A,
R

=9.1Ω

G

See Fig 13

V

=-160V,VGS=-10V,

DS

I

=-11A

D

See Fig 6 & Fig 12

See Fig 5

4

O

4

O

4

O

O4O

O

5

5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature

1

O

2

L=10mH, I

O

3

I

O

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-11A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

-11A, di/dt 450A/µs, VDDBV

<

SD

_

<

--

1

O

4

O

_

<

, Starting TJ =25oC

DSS

_

<

--

--

--

-­180

--

1.24

--

-44

-5.0

--

--

A

V
ns
µC

-11

--

Integral reverse pn-diode
in the MOSFET
T

=25oC,IS=-11A,VGS=0V

J

T

=25oC,IF=-11A

J

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 1 5 V

- 10 V

- 8.0 V

1

- 7.0 V

10

- 6.0 V

- 5.5 V

- 5.0 V
Bott om : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

1.50

-VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SFH9240

1

10

150 oC

0

10

, Drain Current [A ]

-I

1

10

25 oC

D

- 55 oC

-1

10

246810

-VGS , Gate-Source Vo ltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= -40 V

DS

s Pulse Test

µ

1.25

]

Ω

1.00

, [

0.75

DS(on)

R

0.50

VGS = -10 V

Drain-Source On-Resistance

0.25

0.00
0 7 14 21 28 35 42

VGS = -20 V

-ID , Drain Current [A ]

2500

2000

C

iss

1500

C

oss

1000

Capacitance [pF]

C

rss

500

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1

10

-VDS , Drain-Source Voltage [V]

@ Note : TJ = 25 oC

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

0

10

, Reverse Drain C urrent [A]

DR

-I

10

150 oC

25 oC

-1

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

@ Notes :

1. V

2. 250

GS

= 0 V

µ

s Pulse Test

-VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Vo ltage [V]

GS

-V

0

0 1020304050

VDS = -40 V

VDS = -100 V

VDS = -160 V

@ Notes : ID =-11 A

QG , Total Gate Char ge [nC]