Fairchild Semiconductor SFF9244 Datasheet
Advanced Power MOSFET
SFF9244
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA(Max.) @ V
! Lower R
: 0.549 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
=25oC)
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 ” from case for 5-seconds
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
= -250V
DS
O
O
O
O
O
BV
R
DS(on)
DSS
= -250 V
= 0.8 Ω
ID= -6.0 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
-250
-6.0
-4.1
1
2
1
1
3
24
+
_
30
450
-6.0
6.0
-4.8
60
0.48
- 55 to +150
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
o
C
C
Thermal Resistance
Symbol Typ.
R
θJC
R
θJA
Characteristic Max.
Junction-to-Case
Junction-to-Ambient
Units
--
--
2.08
40
o
C/W
Rev. A
SFF9244
P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain( “ Miller “ ) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
-250
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.22
--
--
--
--
--
--
4.8
1205
175
65
14
21
47
18
45
8.7
23.4
--
--
-4.0
-100
100
-10
-100
0.8
--
1565
265
100
40
50
105
45
58
--
--
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
=0V,ID=-250µA
GS
I
=-250µA See Fig 7
D
V
=-5V,ID=-250µA
DS
V
=-30V
GS
V
=30V
GS
VDS=-250V
V
=-200V,TC=125oC
DS
=-10V,ID=-3.0A
V
GS
=-40V,ID=-3.0A
V
DS
VGS=0V,VDS=-25V,f =1MHz
VDD=-125V,ID=-8.6A,
R
=9.1Ω
G
See Fig 13
V
=-200V,VGS=-10V,
DS
I
=-8.6A
D
See Fig 6 & Fig 12
See Fig 5
O
O
4
O
4
O
4
5
O
4
5
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
1
O
2
L=20mH, I
O
3
I
O
4
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O
Essentially Independent of Operating Temperature
5
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-6.0A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
AS
_
-8.6A, di/dt 450A/µs, VDDBV
<
SD
_
<
--
1
O
4
O
_
<
, Starting TJ =25oC
DSS
_
<
--
--
--
-210
--
1.82
--
-24
-5.0
--
--
A
V
ns
µC
-6.0
--
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=-6.0A,VGS=0V
J
T
=25oC,IF=-8.6A
J
di
/dt=100A/µs
F
O
4
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : - 1 5 V
- 10 V
- 8.0 V
1
10
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bott om : - 4.5 V
0
10
, Drain Current [A]
D
-I
-1
10
-1
10
-VDS , Drain-Source Voltage [V]
2.0
]
1.5
Ω
, [
1.0
DS(on)
R
0.5
Drain-Source On-Resistance
0.0
0 7 14 21 28
VGS = -10 V
-ID , Drain Current [A]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
VGS = -20 V
1
10
@ Note : TJ = 25 oC
SFF9244
1
10
150 oC
0
10
25 oC
, Drain Current [A ]
D
-I
-1
10
246810
- 55 oC
-VGS , Gate-Source Vo ltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
150 oC
, Reverse Drain Cu rrent [A]
DR
-I
-1
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
25 oC
-VSD , Source-Drain Voltage [V]
@ Notes :
1. V
2. V
3. 250
@ Notes :
1. V
2. 250
GS
= 0 V
GS
= -40 V
DS
= 0 V
µ
s Pulse Test
µ
s Pulse Test
2500
2000
C
iss
1500
C
1000
Capacitance [pF]
oss
C
rss
500
0
0
10
-VDS , Drain-Source Voltage [V]
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
2. f = 1 MHz
1
10
GS
= 0 V
10
VDS = -50 V
VDS = -125 V
VDS = -200 V
5
, Gate-Source Vo ltage [V]
GS
-V
0
0 1020304050
QG , Total Gate Char ge [nC]
@ Notes : ID =-8.6 A
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
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