Fairchild Semiconductor SB3100, SB330, SB340, SB350, SB320 Datasheet
...
SB320 - SB3100
Features
• 3.0 ampere operation at T
with no thermal runaway.
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
3.0 Ampere Schottky Barrier Rectifiers
= 75°C
A
DO-201AD
COLOR BAND DENOTES CATHODE
Discrete POWER & Signal
Technologies
1.0 min (25.4)
Dime ns ions i n
inches (mm)
0.375 (9.53)
0.285 (7.24)
0.210 (5.33)
0.190 (4.83)
0.052 (1.32)
0.048 (1.22)
SB320-SB3100
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
.375 " lead length @ T
= 75°C
A
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 40
Storage Temperature Range -65 to +125
Operating Junction Temperature -65 to +125
3.0 A
80 A
3.6
36
mW/°C
°
C/W
W
°
C
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
320 330 340 350 360 380 3100
Peak Repetitive Reverse Volt age 20 30 40 50 60 80 100 V
Maximum RMS Voltage 14 21 28 35 42 56 80 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current TA = 25°C
@ rated V
R
TA = 100°C
Maximum Forward Voltage @ 3.0 A 500 740 850 mV
Maximum Full Load Reverse Current,
Full Cycle T
= 100°C
A
Typical Junction Capacitanc e
V
= 4.0 V, f = 1.0 MHz
R
20 30 40 50 60 80 80 V
0.5 mA
20 10 10 mA
30 mA
180 pF
1998 Fairchild Semiconductor Corporation
T ypical Characteristics
SB320-SB3100
Schottky Barrier Rectifiers
(continued)
Forward Current De ratin g Curve
4
3
SINGLE PHASE
HALF WAVE
2
1
FORWAR D CURRENT (A )
0
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm LEAD
LENGTHS
0 20 40 60 80 100 120 140
LEAD TEMPERATURE ( C)
º
Non-Repetitive Surge Current
80
70
60
50
40
30
20
FORWARD SURGE CURRENT (A)
10
12 51020 50100
NUMBER OF CYCLES AT 60Hz
8.3ms Sin gle Half Sine-Wave
JEDEC Method
Forward Charact eristics
20
10
1
FORWAR D CU RRENT (A)
0.1
º
T = 25 C
J
Pulse Width = 200µS
SB320-SB340
SB350-SB360
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
SB380-SB3100
Reverse Characteris tics
100
SB320
10
SB360
1
0.1
REVERSE CURRENT (mA)
0.01
5 10152025303540
REVERSE VOLTAGE (V)
T = 125 C
J
T = 75 C
J
SB3100
T = 25 C
J
º
º
º
Junction Capacitance
1000
800
600
400
200
100
80
60
40
CAPACITAN CE (p F)
20
10
0.1 0.4 1 4 10 40 100
REVERSE VOLTAGE (V)
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