Fairchild Semiconductor NDP6050 Datasheet
March 1996
NDP6050 / NDB6050
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
________________________________________________________________________________
48A, 50V. R
= 0.025Ω @ VGS=10V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need for
an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP6050 NDB6050 Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage 50 V
Drain-Gate Voltage (RGS < 1 MΩ)
50 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs)
± 40
Drain Current - Continuous 48 A
- Pulsed 144
P
D
Total Power Dissipation @ TC = 25°C 100 W
Derate above 25°C 0.67 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP6050 Rev. A1 / NDB6050 Rev. B
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche
VDD = 25 V, ID = 48 A 200 mJ
Energy
Maximum Drain-Source Avalanche Current 48 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 50 V, V
GS
= 0 V
TJ = 125°C
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
50 V
250 µA
1 mA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A 0.02 0.025
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 10 V
Forward Transconductance VDS = 10 V, ID = 24 A 10 19 S
2 2.9 4 V
1.4 2.3 3.6
0.032 0.04
48 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 475 800 pF
Reverse Transfer Capacitance 150 400 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1190 1800 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 48 A,
Turn - On Rise Time 145 300 nS
VGS = 10 V, R
GEN
= 7.5 Ω
10 20 nS
Turn - Off Delay Time 28 60 nS
Turn - Off Fall Time 77 150 nS
Total Gate Charge
Gate-Source Charge 7.6
VDS = 48 V,
ID = 48 A, VGS = 10V
39 70 nC
Gate-Drain Charge 22
Ω
NDP6050 Rev. A1 / NDB6050 Rev. B
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