Fairchild Semiconductor NDP603AL, NDB603AL Datasheet
NDP603AL / NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
January 1996
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
25A, 30V. R
= 0.022Ω @ VGS=10V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
______________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP603AL NDB603AL Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous ± 20 V
Drain Current - Continuous 25 (Note 1) A
- Pulsed 100
P
D
Total Power Dissipation @ TC = 25°C 50 W
Derate above 25°C 0.4 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
R
θ
R
θ
© 1997 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 2.5 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP603AL.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche
VDD = 15 V, ID = 25 A 100 mJ
Energy
Maximum Drain-Source Avalanche Current 25 A
OFF CHARACTERISTICS
BV
I
I
I
DSS
GSSF
GSSR
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
30 V
10 µA
100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.1 1.5 3 V
TJ = 125oC 0.7 1.1 2.2
VDS = VGS, ID = 10 mA
1.4 1.85 3
TJ = 125oC 1 1.5 2.2
R
DS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 25 A
0.019 0.022
TJ = 125oC 0.028 0.045
VGS = 4.5 V, ID = 10 A
I
D(on)
On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
VGS = 4.5 V, VDS = 10 V
g
FS
Forward Transconductance VDS = 10 V, ID = 25 A 18 S
0.031 0.04
15
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 540 pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 175 pF
1100 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time VDD = 15 V, ID = 25 A,
Turn - On Rise Time 70 110 ns
VGS = 10 V, R
GEN
= 24 Ω
15 30 ns
Turn - Off Delay Time 90 150 ns
Turn - Off Fall Time 80 130 ns
Total Gate Charge VDS = 10 V,
Gate-Source Charge 5 7 nC
ID = 25 A, VGS = 10 V
28 40 nC
Gate-Drain Charge 7 10 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Note:
1. Maximum DC current limited by the package.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current 25 A
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 25 A (Note 2)
1.3 V
Ω
NDP603AL.SAM
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