Fairchild Semiconductor NDP6030PL Datasheet
NDP6030PL / NDB6030PL
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
June 1997
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-30 A, -30 V. R
R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
= 0.042 Ω @ VGS= -4.5 V
DS(ON)
= 0.025 Ω @ VGS= -10 V.
DS(ON)
.
DS(ON)
175°C maximum junction temperature rating.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings T
Symbol Parameter NDP6030PL NDB6030PL Units
V
DSS
V
GSS
I
D
P
D
TJ,T
T
L
TJ,T
THERMAL CHARACTERISTICS
R
JC
θ
R
θJA
© 1997 Fairchild Semiconductor Corporation
Drain-Source Voltage -30 V
Gate-Source Voltage - Continuous ±16 V
Drain Current - Continuous -30 A
- Pulsed -90
Total Power Dissipation @ TC = 25°C
Derate above 25°C 0.5
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Operating and Storage Temperature Range -65 to 175 °C
STG
Thermal Resistance, Junction-to-Case 2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
= 25°C unless otherwise noted
C
75 W
275 °C
NDP6030PL Rev.B1
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = -250 µA, Referenced to 25 o C
VDS = -24 V, V
GS
= 0 V
-36
-250 µA
mV/oC
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
VGS = 16 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA
-100 nA
ON CHARACTERISTICS (Note)
∆V
V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage Temp.Coefficient
/∆T
J
Gate Threshold Voltage
ID = -250 µA, Referenced to 25 o C
VDS = VGS, ID= -250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = -4.5 V, ID = -15 A 0.037 0.042
TJ = 125°C
2.2
mV/oC
-1 -1.4 -2 V
-0.8 -1.08 -1.6
0.053 0.075
Ω
VGS = -10 V, ID = -19 A 0.021 0.025
I
g
D(on)
On-State Drain Current
FS
Forward Transconductance VDS = -4.5 V, ID = -19 A 20 S
VGS = -4.5 V, VDS = -5 V
-20 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 975 pF
Reverse Transfer Capacitance 360 pF
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
1570 pF
SWITCHING CHARACTERISTICS (Note)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 60 120 nS
VDD = -15 V, ID = -5 A,
VGS = -5 V, R
GEN
= 6 Ω
Turn - Off Delay Time 50 100 nS
Turn - Off Fall Time 52 100 nS
g
gs
gd
Total Gate Charge
Gate-Source Charge 6.5 nC
Gate-Drain Charge 11.5 nC
VDS= -12 V
ID = -30 A , VGS = -5 V
12.5 25 nS
26 36 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
ISM
V
SD
t
rr
Irr Reverse Recovery Current -1.5 A
Note:
Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuos Drain-Source Diode Forward Current -30 A
Maximum Pulsed Drain-Source Diode Forward Current -100 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -15 A (Note) -0.92 -1.3 V
Reverse Recovery Time
VGS = 0 V, IF = -30 A
58 ns
dIF/dt = 100 A/µs
NDP6030PL Rev.B1
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