Fairchild Semiconductor NDP6030L Datasheet
NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
June 1996
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters
and high efficiency switching circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
52 A, 30 V. R
R
= 0.020 Ω @ VGS=4.5 V.
DS(ON)
= 0.0135 Ω @ VGS=10 V
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP6030L NDB6030L Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous ± 16 V
Drain Current - Continuous 52 A
- Pulsed 156
P
D
Total Power Dissipation @ TC = 25°C
75 W
Derate above 25°C 0.5 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
R
θ
R
θ
© 1998 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 2 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP6030L Rev.E
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 52 A 100 mJ
Maximum Drain-Source Avalanche Current 52 A
OFF CHARACTERISTICS
BV
I
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
10 µA
TJ = 125oC 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
VGS = 16 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA
100 nA
ON CHARACTERISTICS (Note 1)
V
GS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1 1.6 3 V
TJ = 125oC 0.7 1 2.2
R
I
g
DS(ON)
D(on)
FS
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
VGS = 10 V, ID = 26 A
TJ = 125oC
VGS = 4.5 V, ID = 21 A
VGS = 10 V, VDS = 10 V
VGS = 4.5 V, VDS = 10 V
VDS = 10 V, ID = 26 A
0.011 0.0135
0.017 0.024
0.018 0.02
60 A
15
32 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 800 pF
Reverse Transfer Capacitance 300 pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1350 pF
Ω
NDP6030L Rev.E
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 15 V, ID = 52 A,
Turn - On Rise Time 130 250 nS
VGS = 10 V, R
GEN
= 24 Ω
8 16 nS
Turn - Off Delay Time 45 90 nS
Turn - Off Fall Time 108 200 nS
Total Gate Charge VDS= 10 V
Gate-Source Charge 6 nC
ID = 52 A , VGS =10 V
44 60 nC
Gate-Drain Charge 14 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current 52 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 120 A
V
SD
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 26 A (Note 1)
TJ = 125°C
0.93 1.3 V
0.85 1.2
NDP6030L Rev.E
R , NORMALIZED
Typical Electrical Characteristics
R , NORMALIZED
R , NORMALIZED
V , NORMALIZED
60
V = 10V
GS
50
40
30
20
D
10
I , DRAIN-SOURCE CURRENT (A)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
0
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
I = 26A
D
1.6
V = 10V
GS
1.4
1.2
1
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
0.8
3
V =3.0V
GS
2.5
3.5
2
1.5
DS(on)
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 10 20 30 40 50 60
4.0
4.5
I , DRAIN CURRENT (A)
D
5.0
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
2
V = 10V
GS
1.75
T = 125°C
1.5
1.25
1
DS(on)
DRAIN-SOURCE ON-RESISTANCE
0.75
J
25°C
-55°C
6.0
10
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
50
V = 10V
DS
40
30
20
D
I , DRAIN CURRENT (A)
10
0
0 1 2 3 4 5
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
125°C
Figure 5. Transfer Characteristics.
25°C
0.5
0 10 20 30 40 50 60
I , DRAIN CURRENT (A)
D
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
1.4
V = V
DS
1.2
1
0.8
GS(th)
0.6
GATE-SOURCE THRESHOLD VOLTAGE
0.4
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
I = 250µA
D
Figure 6. Gate Threshold Variation
with Temperature.
GS
NDP6030L Rev.E
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