Fairchild Semiconductor NDP6030, NDB6030L Datasheet
July 1997
NDP6030 / NDB6030
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance and
provide superior switching performance. These devices are
particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
________________________________________________________________________________
46 A, 30 V. R
= 0.018 @ VGS=10 V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications
D
G
S
Absolute Maximum Ratings T
Symbol Parameter NDP6030 NDB6030 Units
V
DSS
V
DGR
V
GSS
I
D
P
D
TJ,T
THERMAL CHARACTERISTICS
R
θJC
R
θ JA
Drain-Source Voltage 30 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
Drain Current - Continuous 46 A
- Pulsed 135
Total Power Dissipation @ TC = 25°C
Derate above 25°C 0.5 W/°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Thermal Resistance, Junction-to-Case 2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
= 25°C unless otherwise noted
C
30 V
75 W
© 1997 Fairchild Semiconductor Corporation
NDP6030.RevB
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 46 A 100 mJ
Maximum Drain-Source Avalanche Current 46 A
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 o C
VDS = 24 V, V
GS
= 0 V
30
10 µA
mV/oC
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
100 nA
ON CHARACTERISTICS (Note)
∆V
V
GS(th)
GS(th)
Gate Threshold VoltageTemp. Coefficient
/∆T
J
Gate Threshold Voltage
ID = 250 µA, Referenced to 25 o C
VDS = VGS, ID = 250 µA
-6
mV/oC
2 2.3 4 V
TJ = 125°C 1.4 1.7 2.8
R
I
g
D(on)
DS(ON)
FS
Static Drain-Source On-Resistance
VGS = 10 V, ID = 23 A
TJ = 125°C
On-State Drain Current VGS = 10 V, VDS= 10 V 60 A
Forward Transconductance
VDS = 10 V, ID = 23 A
0.014 0.018
0.019 0.032
22 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 915 pF
Reverse Transfer Capacitance 385 pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1165 pF
SWITCHING CHARACTERISTICS (Note)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 103 200 nS
VDD = 30 V, ID = 46 A,
VGS = 10 V, R
GEN
= 11 Ω
Turn - Off Delay Time 40 80 nS
Turn - Off Fall Time 98 200 nS
g
gs
gd
Total Gate Charge
Gate-Source Charge 7 nC
Gate-Drain Charge 13 nC
VDS =15 V,
ID = 46 A, VGS = 10 V
9 18 nS
34 47 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
ISM
V
SD
Maximum Continuos Drain-Source Diode Forward Current 46 A
Maximum Pulsed Drain-Source Diode Forward Current 135 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23 A (Note) 0.9 1.3 V
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Ω
NDP6030.RevB
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