Fairchild Semiconductor NDP6020 Datasheet
November 1996
NDP6020 / NDB6020
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These logic level N-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
_______________________________________________________________________________
35 A, 20 V. R
R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
= 0.023 Ω @ VGS= 4.5 V
DS(ON)
= 0.028 Ω @ VGS= 2.7 V.
DS(ON)
DS(ON)
D
.
G
S
Absolute Maximum Ratings T
Symbol Parameter NDP6020 NDB6020 Units
V
DSS
V
DGR
V
GSS
I
D
P
D
TJ,T
Drain-Source Voltage 20 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±8 V
Drain Current - Continuous 35 A
- Pulsed 100
Total Power Dissipation @ TC = 25°C 60 W
Derate above 25°C 0.4 W/°C
Operating and Storage Temperature Range -65 to 175 °C
STG
= 25°C unless otherwise noted
C
20 V
© 1997 Fairchild Semiconductor Corporation
NDP6020 Rev.C
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
DSS
Zero Gate Voltage Drain Current VDS = 16 V, V
= 0 V 1 µA
GS
TJ = 55°C 10 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 1)
V
GS(th)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.62 1 V
TJ = 125°C 0.2 0.35 0.7
R
DS(ON)
Static Drain-Source On-Resistance VGS = 4.5 V, ID = 18 A 0.019 0.023
Ω
TJ = 125°C 0.024 0.032
VGS = 2.7 V, ID = 16 A 0.024 0.028
I
g
D(on)
FS
On-State Drain Current VGS = 4.5 V, VDS = 5 V 60 A
Forward Transconductance VDS = 5 V, ID = 18 A 29 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 10 V, VGS = 0 V,
Output Capacitance 610 pF
f = 1.0 MHz
Reverse Transfer Capacitance 180 pF
1170 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 20 V, ID = 35 A,
Turn - On Rise Time 148 300 nS
VGS = 5 V, R
GEN
= 10 Ω
7 20 nS
R L = 0.5 Ω
Turn - Off Delay Time 98 200 nS
Turn - Off Fall Time 233 450 nS
Total Gate Charge VDS = 15 V,
Gate-Source Charge 6 nC
ID = 35 A, VGS = 5 V
32 45 nC
Gate-Drain Charge 11 nC
NDP6020 Rev.C
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuous Drain-Source Diode Forward Current 35 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 100 A
V
SD
t
rr
I
rr
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 35 A (Note 1) 1.1 1.3 V
Reverse Recovery Time VGS = 0 V, IF = 35 A,
Reverse Recovery Current 1.1 3 A
dIF/dt = 100 A/µs
43 90 ns
THERMAL CHARACTERISTICS
R
θ
R
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 2.5 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP6020 Rev.C
Typical Electrical Characteristics
60
V = 4.5V
GS
50
40
30
20
10
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
3.5
3.0
2.7
2.5
2.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
I = 18A
D
1.6
V = 4.5V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
1.5
1.8
1.6
V = 2.0V
GS
1.4
1.2
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 10 20 30 40 50 60
2.5
2.7
3.0
3.5
I , DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
V = 4.5 V
GS
1.6
1.4
1.2
1
0.8
DS(on)
R , NORMALIZED
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
0 10 20 30 40 50 60
T = 125°C
J
25°C
-55°C
I , DRAIN CURRENT (A)
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
4.0
4.5
5.0
20
V = 5V
DS
15
10
D
5
I , DRAIN CURRENT (A)
0
0.5 1 1.5 2
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
125°C
Figure 5. Transfer Characteristics.
25°C
1.4
V = V
1.2
1
0.8
th
V , NORMALIZED
0.6
0.4
GATE-SOURCE THRESHOLD VOLTAGE
0.2
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
DS
I = 250µA
D
Figure 6. Gate Threshold Variation with
Temperature.
GS
NDP6020 Rev.C
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