Fairchild Semiconductor NDB5060L, NDP5060L Datasheet

October 1996

NDP5060L / NDB5060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.

________________________________________________________________________________

26 A, 60 V. R
R

= 0.05 Ω @ VGS= 5 V

DS(ON)

= 0.035 Ω @ VGS= 10 V.

DS(ON)

Critical DC electrical parameters specified at elevated
temperature.

Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.
High density cell design for extremely low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter NDP5060L NDB5060L Units

V

DSS

V

DGR

V

GSS

I

D

P

D

TJ,T

© 1997 Fairchild Semiconductor Corporation

Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)

Gate-Source Voltage - Continuous ±16 V

- Nonrepetitive (tP < 50 µs)

Drain Current - Continuous 26 A

- Pulsed 78
Total Power Dissipation @ TC = 25°C 68 W

Derate above 25°C 0.45 W/°C

Operating and Storage Temperature Range -65 to 175 °C

STG

= 25°C unless otherwise noted

C

60 V

±25

NDP5060L Rev.A

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

I

AR

Single Pulse Drain-Source Avalanche

DSS

Energy

VDD = 30 V, ID = 26 A 100 mJ

Maximum Drain-Source Avalanche Current 26 A

OFF CHARACTERISTICS

BV
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA
VDS = 60 V, V

GS

= 0 V

TJ = 125°C

Gate - Body Leakage, Forward

VGS = 16 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA

60 V

250 µA

1 mA

100 nA

ON CHARACTERISTICS (Note 1)

V

R

I
g

GS(th)

DS(ON)

D(on)

FS

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

TJ = 125°C

Static Drain-Source On-Resistance VGS = 5 V, ID = 13 A 0.042 0.05

TJ = 125°C

VGS = 10 V, ID = 13 A
On-State Drain Current VGS = 5 V, VDS = 10 V 26 A
Forward Transconductance

VDS = 10 V, ID = 13 A

1 1.4 2 V

0.65 1 1.5

Ω

0.07 0.08

0.031 0.035

16 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 230 pF
Reverse Transfer Capacitance 75 pF

VDS = 30 V, VGS = 0 V,

f = 1.0 MHz

840 pF

SWITCHING CHARACTERISTICS (Note 1)

t
t

t
t

Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time 200 400 nS

VDD = 30 V, ID = 26 A,

VGS = 5 V, R

GEN

= 30 Ω

RGS = 30 Ω
Turn - Off Delay Time 45 80 nS

Turn - Off Fall Time 102 200 nS

g

gs

gd

Total Gate Charge
Gate-Source Charge 4 nC
Gate-Drain Charge 10 nC

VDS = 24 V,

ID = 26 A, VGS = 5 V

13 20 nS

17 24 nC

NDP5060L Rev.A

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS

I
ISM
V

t
I

S

SD

rr

rr

Maximum Continuos Drain-Source Diode Forward Current 26 A
Maximum Pulsed Drain-Source Diode Forward Current 78 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13 A (Note 1) 0.9 1.3 V
Reverse Recovery Time

Reverse Recovery Current 2.1 8 A

VGS = 0 V, IF = 26 A,

dIF/dt = 100 A/µs

54 120 ns

THERMAL CHARACTERISTICS

R

θ

R

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 2.2 °C/W

JC

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

JA

NDP5060L Rev.A

R , NORMALIZED

V , NORMALIZED

R , NORMALIZED

R , NORMALIZED

Typical Electrical Characteristics

50

40

30

20

10

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V = 10V

GS

6.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

5.0

4.5

4.0

3.5

Figure 1. On-Region Characteristics.

2

I = 13A

D

1.75

V = 5V

GS

1.5

1.25

1

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

0.75

3.0

2.5

2

V = 3.0 V

GS

1.8

1.6

1.4

1.2

1

DS(on)

DRAIN-SOURCE ON-RESISTANCE

0.8

0.6
0 10 20 30 40 50

3.5

4.0

I , DRAIN CURRENT (A)

D

4.5

5.0

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

2

V = 5 V

GS

1.5

1

DS(on)

0.5

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

J

25°C

-55°C

6.0

10

0.5

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

Figure 3. On-Resistance Variation

with Temperature.

20

V = 5V

DS

16

12

8

D

I , DRAIN CURRENT (A)

4

0

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

T = -55°C

J

25°C

125°C

GS

Figure 5. Transfer Characteristics.

0

0 10 20 30 40 50

I , DRAIN CURRENT (A)

D

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.3

1.2

1.1
1

0.9

0.8

0.7

0.6

GS(th)

0.5

GATE-SOURCE THRESHOLD VOLTAGE

0.4

0.3

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

V = V

DS

I = 250µA

D

Figure 6. Gate Threshold Variation with

Temperature.

GS

NDP5060L Rev.A