Fairchild Semiconductor NDP5060 Datasheet
October 1996
NDP5060 / NDB5060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
________________________________________________________________________________
26 A, 60 V. R
= 0.05 Ω @ VGS= 10 V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
D
G
S
Absolute Maximum Ratings T
Symbol Parameter NDP5060 NDB5060 Units
V
DSS
V
DGR
V
GSS
I
D
P
D
TJ,T
© 1997 Fairchild Semiconductor Corporation
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous 26 A
- Pulsed 78
Total Power Dissipation @ TC = 25°C 68 W
Derate above 25°C 0.45 W/°C
Operating and Storage Temperature Range -65 to 175 °C
STG
= 25°C unless otherwise note
C
60 V
±40
NDP5060 Rev.A
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
I
AR
Single Pulse Drain-Source Avalanche
DSS
Energy
VDD = 30 V, ID = 26 A 100 mJ
Maximum Drain-Source Avalanche Current 26 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, V
GS
= 0 V
TJ = 125°C
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
60 V
250 µA
1 mA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = 10 V, ID = 13 A 0.04 0.05
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 10 V
Forward Transconductance VDS = 10 V, ID = 13 A 9 S
2 2.9 4 V
1.4 2.2 2.8
Ω
0.07 0.08
26 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 225 pF
Reverse Transfer Capacitance 70 pF
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
630 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 26 A,
Turn - On Rise Time 95 200 nS
VGS = 10 V, R
GEN
= 15 Ω
9 20 nS
Turn - Off Delay Time 19 40 nS
Turn - Off Fall Time 48 100 nS
Total Gate Charge
Gate-Source Charge 5 nC
VDS = 24 V,
ID = 26 A, VGS = 10 V
20 40 nC
Gate-Drain Charge 11 nC
NDP5060 Rev.A
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
ISM
V
t
I
S
SD
rr
rr
Maximum Continuos Drain-Source Diode Forward Current 26 A
Maximum Pulsed Drain-Source Diode Forward Current 78 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13 A (Note 1) 0.9 1.3 V
Reverse Recovery Time
Reverse Recovery Current 2.1 8 A
VGS = 0 V, IF = 26 A,
dIF/dt = 100 A/µs
54 120 ns
THERMAL CHARACTERISTICS
R
θ
R
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 2.2 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP5060 Rev.A
R , NORMALIZED
V , NORMALIZED
R , NORMALIZED
R , NORMALIZED
Typical Electrical Characteristics
50
40
V = 20V
GS
12
10
9.0
8.0
30
20
10
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
2
I = 13A
D
V = 10V
1.75
GS
1.5
1.25
1
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
0.75
7.0
6.0
5.0
2
1.8
V = 6.0 V
1.6
GS
7.0
1.4
8.0
1.2
1
DS(on)
DRAIN-SOURCE ON-RESISTANCE
0.8
0.6
0 10 20 30 40 50
I , DRAIN CURRENT (A)
D
9.0
10
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2.5
V =10 V
GS
2
T = 125°C
1.5
DS(on)
1
DRAIN-SOURCE ON-RESISTANCE
J
25°C
-55°C
12
20
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
40
V = 10V
DS
32
24
16
D
I , DRAIN CURRENT (A)
8
0
2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 5. Transfer Characteristics.
0.5
0 10 20 30 40 50
I , DRAIN CURRENT (A)
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
V = V
1.1
1
0.9
0.8
GS(th)
0.7
GATE-SOURCE THRESHOLD VOLTAGE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
DS
I = 250µA
D
Figure 6. Gate Threshold Variation with
Temperature.
GS
NDP5060 Rev.A
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