Fairchild Semiconductor NDP410A Datasheet
May 1994
NDP410A / NDP410AE / NDP410B / NDP410BE
NDB410A / NDB410AE / NDB410B / NDB410BE
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
_____________________________________________________________________
9 and 8A, 100V. R
= 0.25 and 0.30Ω.
DS(ON)
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
D
Absolute Maximum Ratings T
Symbol Parameter
V
V
V
I
P
TJ,T
T
DSS
DGR
GSS
D
D
L
Drain-Source Voltage 100 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous 9 8 A
- Pulsed 36 32 A
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
= 25°C unless otherwise noted
C
NDP410A NDP410AE
NDB410A NDB410AE
G
S
NDP410B NDP410BE
NDB410B NDB410BE Units
100 V
±40 V
50 W
0.33
W/°C
275 °C
© 1997 Fairchild Semiconductor Corporation
NDP410.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Type Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
E
AS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current 9 A
VDD = 25 V, ID = 9 A NDP410AE
NDP410BE
NDB410AE
NDB410BE
50 mJ
OFF CHARACTERISTICS
BV
Drain-Source Breakdown
DSS
VGS = 0 V, ID = 250 µA ALL 100 V
Voltage
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain
Current
VDS = 100 V,
V
= 0 V
GS
TJ = 125°C
ALL 250 µA
1 mA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
ALL -100 nA
ON CHARACTERISTICS (Note 2)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS,
ID = 250 µA
VGS = 10 V,
ID = 4.5 A
TJ = 125°C
ALL 2 2.9 4 V
1.4 2.3 3.6 V
NDP410A
0.2 0.25
NDP410AE
NDB410A
0.38 0.5
0.3
VGS = 10 V,
ID = 4 A
TJ = 125°C
NDB410AE
NDP410B
NDP410BE
NDB410B
0.6
I
D(on)
TJ = 125°C
NDB410BE
On-State Drain Current VGS = 10 V, VDS = 10 V NDP410A
9 A
NDP410AE
NDB410A
NDB410AE
NDP410B
8 A
NDP410BE
NDB410B
NDB410BE
g
FS
Forward Transconductance VDS = 10 V, ID = 4.5 A ALL 3 4.8 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance ALL 80 100 pF
f = 1.0 MHz
Reverse Transfer Capacitance ALL 20 30 pF
ALL 385 500 pF
Ω
Ω
Ω
Ω
NDP410.SAM
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