Fairchild Semiconductor NDP408A Datasheet

May 1994

NDP408A / NDP408AE / NDP408B / NDP408BE
NDB408A / NDB408AE / NDB408B / NDB408BE
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.

_____________________________________________________________________

12 and 11A, 80V. R

= 0.16 and 0.20Ω.

DS(ON)

Critical DC electrical parameters specified at
elevated temperature.

Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.

175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely

low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.

D

Absolute Maximum Ratings T

Symbol Parameter

V
V
V

I

P

TJ,T
T

DSS

DGR

GSS

D

D

L

Drain-Source Voltage 80 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V

- Nonrepetitive (tP < 50 µs)

Drain Current - Continuous 12 11 A

- Pulsed 36 33 A
Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds

= 25°C unless otherwise noted

C

NDP408A NDP408AE
NDB408A NDB408AE

G

S

NDP408B NDP408BE
NDB408B NDB408BE Units

80 V

±40 V

50 W

0.33

W/°C

275 °C

© 1997 Fairchild Semiconductor Corporation

NDP408.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Type Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

E

AS

I

AR

Single Pulse Drain-Source
Avalanche Energy

Maximum Drain-Source Avalanche Current 12 A

VDD = 25 V, ID = 12 A NDP408AE

NDP408BE
NDB408AE
NDB408BE

40 mJ

OFF CHARACTERISTICS

BV

Drain-Source Breakdown

DSS

VGS = 0 V, ID = 250 µA ALL 80 V

Voltage

I

DSS

I

GSSF

I

GSSR

Zero Gate Voltage Drain
Current

VDS = 80 V,
V

= 0 V

GS

ALL 250 µA

TJ = 125°C 1 mA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

ALL -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

VDS = VGS,
ID = 250 µA

VGS = 10 V,
ID = 6 A

ALL 2 2.9 4 V

TJ = 125°C 1.4 2.3 3.6 V

NDP408A

0.11 0.16

NDP408AE

NDB408A

TJ = 125°C 0.19 0.32

VGS = 10 V,
ID = 5.5 A

NDB408AE

NDP408B

NDP408BE

0.2

NDB408B

I

D(on)

TJ = 125°C 0.5
On-State Drain Current VGS = 10 V, VDS = 10 V NDP408A

NDB408BE

11 A

NDP408AE

NDB408A

NDB408AE

NDP408B

10 A

NDP408BE

NDB408B

NDB408BE

g

FS

Forward Transconductance VDS = 10 V, ID = 6 A ALL 3 5.3 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance ALL 115 125 pF

f = 1.0 MHz

Reverse Transfer Capacitance ALL 35 50 pF

ALL 380 500 pF

Ω

Ω
Ω

Ω

NDP408.SAM