Fairchild Semiconductor NDM3001 Datasheet

February 1997

NDM3001

3 Phase Brushless Motor Driver

General Description Features

The NDM3001 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.

________________________________________________________________________________

±2.9 A, ±30 V, 2.5W
High density cell design for extremely low R

DS(ON)

High power and current handling capability.
Industry standard SOIC-16 surface mount package.

11,14

10
12
15

Q1

.

Q5Q3

1,16
4,13
8,9

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

2
5

7

3,6

Q2

Q6Q4

Symbol Parameter NDM3001 Units

V

DSS

V

GSS

I

D

Drain-Source Voltage (All Types) ±30 V
Gate-Source Voltage (All Types) ±20 V
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -

±2.9 A

Continuous Q3+Q6 or Q5+Q2 or Q5+Q4

- Pulsed (Note 1a & 2) ±10

P

TJ,T

D

Total Power Dissipation (Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or (Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4

(Note 1c)

Operating and Storage Temperature Range -55 to 150 °C

STG

2.5 W

1.6

1.4

© 1997 Fairchild Semiconductor Corporation

NDM3001 Rev.C

THERMAL CHARACTERISTICS

R

θ

Thermal Resistance, Junction-to-Ambient

JA

Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1a)

R

θ

Thermal Resistance, Junction-to-Case

JC

Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1)

50 °C/W

20 °C/W

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV
I

DSS

I

GSS

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current VDS = ±24 V, V

VGS = 0 V, ID = ± 250 µA

= 0 V All ±1 µA

GS

TJ=55oC

Gate - Body Leakage, Forward VGS = ±20 V, VDS = 0 V All ±100 nA

All ±30 V

±10 µA

ON CHARACTERISTICS (Note 3)
V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

VDS = VGS, ID = -250 µA

TJ=125oC

VDS = VGS, ID = 250 µA

TJ=125oC

VGS = -10 V, ID = -2.9 A

TJ=125oC

Q1, Q3, Q5 - 1 -1.6 -2 V

- 0.75 -1.3 -1.5

Q2, Q4, Q6 1 1.5 2

0.75 1.2 1.5

Q1, Q3, Q5 0.19 0.24

0.27 0.45

Ω

VGS = -4.5 V, ID = -2.2 A 0.3 0.36
VGS = 10 V, ID = 2.9 A

Q2, Q4, Q6 0.09 0.115

TJ=125oC 0.126 0.221

0.13 0.16

I

D(on)

VGS = 4.5 V, ID = 2.2 A

On-State Drain Current VGS = 10 V, VDS = -5 V Q1, Q3, Q5 -10 A

VGS = 10 V, VDS = 5 V

Q2, Q4, Q6 10

DYNAMIC CHARACTERISTICS

C

iss

C

oss

Input Capacitance Q1, Q3, Q5

VDS = -15 V, V
f = 1.0 MHz

GS

= 0 V,

Output Capacitance Q1, Q3, Q5 140 pF

Q2, Q4, Q6 VDS =

C

rss

Reverse Transfer Capacitance Q1, Q3, Q5 50 pF

15 V, V
f = 1.0 MHz

GS

= 0 V,

Q1, Q3, Q5 260 pF
Q2, Q4, Q6 185

Q2, Q4, Q6 115

Q2, Q4, Q6 40

NDM3001 Rev.C

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS

t

t

t

t

D(on)

r

D(off)

f

Turn - On Delay Time Q1, Q3, Q5

Turn - On Rise Time Q1, Q3, Q5 13 40 ns

Turn - Off Delay Time Q1, Q3, Q5 21 90 ns

Turn - Off Fall Time Q1, Q3, Q5 5 50 ns

(Note 3)

V

= -15 V, ID = -1 A,

DD

V

= -10 V, R

GEN

Q2, Q4, Q6
V

= 15 V, ID = 1 A,

DD

V

= 10 V, R

GEN

GEN

GEN

= 6 Ω

= 6 Ω

Q1, Q3, Q5 10 40 ns
Q2, Q4, Q6 9 40

Q2, Q4, Q6 21 40

Q2, Q4, Q6 21 90

Q2, Q4, Q6 8 50

Q

g

Q

gs

Total Gate Charge Q1, Q3, Q5

V

= -10 V,

DS

I

= -3.0 A, VGS = -10 V

Gate-Source Charge Q1, Q3, Q5 1.6 nC

D

Q2, Q4, Q6
V

= 10 V,

Q

gd

Gate-Drain Charge Q1, Q3, Q5 3 nC

DS

I

= 3.0 A, VGS = 10 V

D

Q1, Q3, Q5 10 25 nC
Q2, Q4, Q6 9.5 25

Q2, Q4, Q6 1.5

Q2, Q4, Q6 2.5

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current Q1, Q3, Q5 -1.2 A

Q2, Q4, Q6 1.2

V

SD

t

rr

Notes:

1. R
design while R

P

Typical R

Drain-Source Diode Forward
Voltage

Reverse Recovery Time

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

(t)

D

is determined by the user's board design.

CA

θ

=

JA

θ

a. 50
b. 80
c. 90

T

R

T

J−TA

=

(t)

R

JA

θ

θ

JC

using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

o

C/W when mounted on a 1 in2 pad of 2oz cpper.

o

C/W when mounted on a 0.027 in2 pad of 2oz cpper.

o

C/W when mounted on a 0.0028 in2 pad of 2oz cpper.

J−TA

+R

2

=I

(t)×R

DS(ON) T

D

(t)

θ

CA

V

= 0 V, IS = -3.0 A

GS

= 0 V, IS = 3.0 A

V

GS

V

= 0 V, I F = ±3.0 A,

GS

dI

/dt = 100 A/µs

F

J

(Note 3)

(Note 3)

1a 1b

Q1, Q3, Q5 -0.8 -1.3 V
Q2, Q4, Q6 0.8 1.3

All 100 ns

is guaranteed by

JC

θ

1c

2. Pulse Test: Pulse Width <

Scale 1 : 1 on letter size paper

300µs, Duty Cycle < 2.0%.

NDM3001 Rev. C

Typical Electrical Characteristics

10

V =10V

GS

8

6

4

2

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

Figure 1. N-Channel On-Region Characteristic.

2.6

2.4

2.2

2

1.8

1.6

1.4

DS(on)

R , NORMALIZED

1.2

DRAIN-SOURCE ON-RESISTANCE

1

0.8
0 2 4 6 8 10

V = 3.5V

GS

7.0

6.0

5.0

4.5

4.0

3.5

3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

4.0

4.5

5.0

6.0

I , DRAIN CURRENT (A)

D

-10
V = -10V

GS

-8

-6

-4

-2

D

I , DRAIN-SOURCE CURRENT (A)

0

-7.0

-6.0

-5.5

-5.0

-4.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

-4.0

-3.5

-3.0

-5-4-3-2-10

Figure 2. P-Channel On-Region

Characteristics.

2.6

2.4

V = -4.0V

GS

2.2

2

1.8

1.6

1.4

7

10

DS(on)

R , NORMALIZED

1.2

DRAIN-SOURCE ON-RESISTANCE

1

0.8

-4.5

-5.0

-5.5

I , DRAIN CURRENT (A)

D

-6.0

-7.0

-10

-10-8-6-4-20

Figure 3. N-Channel On-Resistance Variation with

Gate Voltage and Drain Current.

1.6

ID= 2.9A
VGS= 10V

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 5. N-Channel On-Resistance Variation

with Temperature.

NDM3001 Rev.C

Figure 4. P-Channel On-Resistance Variation

with Gate Voltage and Drain Current.

1.6

I = -2.9A

D

V = -10V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 6. P-Channel On-Resistance Variation

with Temperature.