Fairchild Semiconductor NDM3000 Datasheet
May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description Features
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
________________________________________________________________________________
±3.0A, ±30V, 2.5W
High density cell design for extremely low R
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
11,14
10
12
15
Q1
DS(ON)
.
Q5Q3
1,16
4,13
8,9
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
2
5
7
3,6
Q2
Q6Q4
Symbol Parameter NDM3000 Units
V
DSS
V
GSS
I
D
Drain-Source Voltage (All Types) ± 30 V
Gate-Source Voltage (All Types) ± 20 V
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
± 3.0 A
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
- Pulsed (Note 1a & 2) ± 10
P
TJ,T
D
Total Power Dissipation (Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or (Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1c)
Operating and Storage Temperature Range -55 to 150 °C
STG
2.5 W
1.6
1.4
© 1997 Fairchild Semiconductor Corporation
NDM3000 Rev. E
THERMAL CHARACTERISTICS
R
θ
Thermal Resistance, Junction-to-Ambient
JA
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1a)
R
θ
Thermal Resistance, Junction-to-Case
JC
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1)
50 °C/W
20 °C/W
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSS
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
VGS = 0 V, ID = ± 250 µA
VDS = ±20 V, V
GS
= 0 V
VGS = ±20 V, VDS = 0 V
TJ=55oC
All ±30 V
All ±1 µA
±25 µA
All ±100 nA
ON CHARACTERISTICS (Note 3)
V
GS(th)
Gate Threshold Voltage VDS = VGS, ID = -250 µA Q1, Q3, Q5 -1 -1.6 -3 V
TJ=125oC
-0.7 -1.25 -2.2
VDS = VGS, ID = 250 µA Q2, Q4, Q6 1 1.7 3
0.7 1.2 2.2
Ω
0.18 0.29
R
DS(ON)
Static Drain-Source
On-Resistance
TJ=125oC
VGS = -10 V, ID = -3.0 A Q1, Q3, Q5 0.125 0.16
TJ=125oC
VGS = -4.5 V, ID = -1.0 A 0.16 0.25
VGS = 10 V, ID = 3.0 A
Q2, Q4, Q6 0.07 0.09
TJ=125oC 0.1 0.16
0.09 0.13
I
D(on)
VGS = 4.5 V, ID = 1.0 A
On-State Drain Current VGS = -10 V, VDS = -5 V Q1, Q3, Q5 -10 A
VGS = 10 V, VDS = 5 V
Q2, Q4, Q6 10
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance Q1, Q3, Q5
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Q1, Q3, Q5 375 pF
Q2, Q4, Q6 360
Output Capacitance Q1, Q3, Q5 245 pF
Q2, Q4, Q6
Reverse Transfer Capacitance Q1, Q3, Q5 130 pF
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Q2, Q4, Q6 260
Q2, Q4, Q6 105
NDM3000 Rev. E
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 3)
t
t
t
t
D(on)
r
D(off)
f
Turn - On Delay Time Q1, Q3, Q5
VDD = -15 V, ID = -1 A,
V
= -10 V, R
Turn - On Rise Time Q1, Q3, Q5 13 40 ns
Turn - Off Delay Time Q1, Q3, Q5 21 90 ns
GEN
Q2, Q4, Q6
VDD = 15 V, ID = 1 A,
V
= 10 V, R
GEN
GEN
GEN
= 6 Ω
= 6 Ω
Q1, Q3, Q5 10 40 ns
Q2, Q4, Q6 9 40
Q2, Q4, Q6 21 40
Q2, Q4, Q6 21 90
Turn - Off Fall Time Q1, Q3, Q5 5 50 ns
Q2, Q4, Q6 8 50
Q
g
Q
gs
Q
gd
Total Gate Charge Q1, Q3, Q5
VDS = -10 V,
ID = -3.0 A, VGS = -10 V
Q1, Q3, Q5 10 25 nC
Q2, Q4, Q6 9.5 25
Gate-Source Charge Q1, Q3, Q5 1.6 nC
Q2, Q4, Q6
Gate-Drain Charge Q1, Q3, Q5 3 nC
VDS = 10 V,
ID = 3.0 A, VGS = 10 V
Q2, Q4, Q6 1.5
Q2, Q4, Q6 2.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current Q1, Q3, Q5 -1.2 A
Q2, Q4, Q6 1.2
V
SD
t
rr
Notes:
1. R
design while R
P
Typical R
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
VGS = 0 V, IS = -3.0 A
VGS = 0 V, IS = 3.0 A
VGS = 0 V, I F = ±3.0 A,
(Note 3)
(Note 3)
dI F /dt = 100 A/µs
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
(t)
D
is determined by the user's board design.
CA
θ
T
=
R
JA
θ
a. 50oC/W when mounted on a 1 in2 pad of 2oz cpper.
b. 80oC/W when mounted on a 0.027 in2 pad of 2oz cpper.
c. 90oC/W when mounted on a 0.0028 in2 pad of 2oz cpper.
T
J−TA
=
(t)
R
θJ A
θJ C+RθCA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J−TA
2
= I
(t) × R
DS(O N ) T
D
(t)
J
1a 1b
Q1, Q3, Q5 -0.8 -1.3 V
Q2, Q4, Q6 0.8 1.3
All 100 ns
is guaranteed by
JC
θ
1c
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Scale 1 : 1 on letter size paper
NDM3000 Rev. E
Typical Electrical Characteristics
20
15
10
5
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3
V =10V
GS
8.0
6.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
5.0
4.5
4.0
Figure 1. N-Channel On-Region Characteristic.
3
V = 3.5V
2.5
GS
4.0
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 3 6 9 12 15
I , DRAIN CURRENT (A)
D
4.5
5.0
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
3.5
6.0
3.0
8.0
10
-20
-15
-10
-5
D
I , DRAIN-SOURCE CURRENT (A)
0
V = -10V
GS
-8.0
-7.0
-6.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 2. P-Channel On-Region
Characteristics.
3
V = -3.5V
2.5
GS
-4.0
-4.5
-5.0
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
I , DRAIN CURRENT (A)
D
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
-5.5
-5.5
-5.0
-4.5
-6.0
-4.0
-7.0
-8.0
-3.5
-3.0
-5-4-3-2-10
-10
-15-12-9-6-30
1.6
I = 3A
1.4
1.2
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
D
V = 10V
GS
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. N-Channel On-Resistance Variation
with Temperature.
1.6
I = -3A
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
D
V = -10V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. P-Channel On-Resistance Variation
with Temperature.
NDM3000 Rev. E
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