Fairchild Semiconductor NDH853N Datasheet
May 1997
NDH853N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
___________________________________________________________________________________________
7.6 A, 30 V. R
R
High density cell design for extremely low R
= 0.017 Ω @ VGS = 10 V
DS(ON)
= 0.025 Ω @ VGS = 4.5 V.
DS(ON)
DS(ON)
.
Proprietary SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter NDH853N Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 7.6 A
- Pulsed 23
P
D
TJ,T
Maximum Power Dissipation (Note 1a) 1.8 W
(Note 1b)
(Note 1c)
Operating and Storage Temperature Range -55 to 150 °C
STG
1
0.9
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W
© 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
I
I
DSS
DSS
GSSF
GSSR
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Zero Gate Voltage Drain Current
VDS = 24 V, V
GS
= 0 V
TJ= 55°C
1 µA
10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 2 V
TJ= 125°C
0.7 1 1.6
Static Drain-Source On-Resistance VGS = 10 V, ID = 7.6 A 0.014 0.017
0.02 0.031
0.021 0.025
23 A
18 S
On-State Drain Current
Forward Transconductance
TJ= 125°C
VGS = 4.5 V, ID = 6.7 A
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 7.6 A
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 630 pF
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
Reverse Transfer Capacitance 210 pF
1140 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 10 V, ID = 1 A,
V
= 10 V, R
Turn - On Rise Time 24 50 ns
GEN
GEN
= 6 Ω
14 30 ns
Turn - Off Delay Time 73 120 ns
Turn - Off Fall Time 48 80 ns
Total Gate Charge VDS = 15 V,
Gate-Source Charge 2.8 nC
ID = 7.6 A, VGS = 10 V
38 50 nC
Gate-Drain Charge 12.7 nC
NDH853N Rev. C
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