Fairchild Semiconductor NDH8504P Datasheet
February 1997
NDH8504P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
SuperSOTTM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
___________________________________________________________________________________________
-2.7 A, -30 V. R
R
= 0.07Ω @ VGS = -10 V
DS(ON)
= 0.115 Ω @ VGS = -4.5 V.
DS(ON)
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
5
6
7
8
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter
V
DSS
V
GSS
I
D
Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1) -2.7 A
- Pulsed -8
P
T
D
J,TSTG
Maximum Power Dissipation (Note 1) 0.8 W
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
4
3
2
1
NDH8504P
Units
© 1997 Fairchild Semiconductor Corporation
NDH8504P Rev.C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V
Zero Gate Voltage Drain Current
VDS = -24V, V
GS
= 0 V
TJ= 55°C
-1 µA
-10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage VDS = VGS, ID = - 250 µA -1 -1.6 -3 V
TJ= 125°C
-0.8 -1.2 -2.4
Static Drain-Source On-Resistance VGS = -10 V, ID = -2.7 A 0.062 0.07
0.088 0.125
0.102 0.115
-8 A
-3
5.5 S
On-State Drain Current
Forward Transconductance
TJ= 125°C
VGS = -4.5 V, ID = -2.1 A
VGS = -10 V, VDS = -5 V
VGS = -4.5 V, VDS = -5 V
VDS = -10 V, ID = -2.7 A
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = -15 V, V
Output Capacitance 340 pF
f = 1.0 MHz
GS
= 0 V,
560 pF
Reverse Transfer Capacitance 130 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 16 30 ns
VDD = -10 V, ID = -1 A,
VGS = -10 V, R
GEN
= 6 Ω
Turn - Off Delay Time 35 70 ns
Turn - Off Fall Time 40 80 ns
g
gs
gd
Total Gate Charge
Gate-Source Charge 3.8 nC
Gate-Drain Charge 4.7 nC
VDS = -10 V,
ID = -2.7 A, VGS = -10 V
13 25 ns
19 27 nC
NDH8504P Rev.C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
design while R
P
Typical R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current -0.67 A
Drain-Source Diode Forward Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
D
(t) =
is determined by the user's board design.
CA
θ
T
R
JA
θ
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
T
J−TA
θJ A
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J−TA
=
R
(t)
θJ C+RθCA
2
= I
(t) × R
DS(ON)@T
D
(t)
J
VGS = 0 V, IS = -0.67 A (Note 2)
-0.74 -1.2 V
is guaranteed by
JC
θ
NDH8504P Rev.C
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