Fairchild Semiconductor NDH8321C Datasheet
NDH8321C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description Features
January 1999
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
N-Ch 3.8 A, 20 V, R
R
P-Ch -2.7 A, -20V, R
R
=0.035 Ω @ VGS= 4.5 V
DS(ON)
=0.045 Ω @ VGS=2.7 V
DS(ON)
=0.07Ω @ VGS= -4.5 V
DS(ON)
=0.095 Ω @ VGS= -2.7 V.
DS(ON)
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
_______________________________________________________________________________
D2
D2
D1
D1
5
6
S2
G2
S1
SuperSOT -8
TM
G1
Mark: .8321C
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter N-Channel P-Channel Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 20 -20 V
Gate-Source Voltage ±8 ±8 V
Drain Current - Continuous (Note 1) 3.8 -2.7 A
- Pulsed 15 -10
P
TJ,T
D
Power Dissipation for Single Operation (Note 1) 0.8 W
Operating and Storage Temperature Range -55 to 150 °C
STG
THERMAL CHARACTERISTICS
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
7
8
4
3
2
1
© 1999 Fairchild Semiconductor Corporation
NDH8321C Rev.C1
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 20 V
VGS = 0 V, ID = -250 µA P-Ch -20 V
I
DSS
Zero Gate Voltage Drain Current VDS = 16 V, V
= 0 V N-Ch 1 µA
GS
TJ = 55oC 10 µA
VDS = -16 V, V
= 0 V P-Ch -1 µA
GS
TJ = 55oC -10 µA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse VGS = -8 V, VDS= 0 V All -100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage VDS = VGS, ID = 250 µA N-Ch 0.4 0.7 1 V
TJ = 125oC 0.3 0.45 0.8
VDS = VGS, ID = -250 µA P-Ch -0.4 -0.7 -1
TJ = 125oC -0.3 -0.5 -0.8
R
DS(ON)
Static Drain-Source On-Resistance VGS = 4.5 V, ID = 3.8 A N-Ch 0.029 0.035
Ω
TJ = 125oC 0.043 0.063
VGS = 2.7 V, ID = 3.3 A 0.036 0.045
VGS = -4.5 V, ID = -2.7 A P-Ch 0.061 0.07
TJ = 125oC 0.087 0.125
VGS = -2.7 V, ID = -2.3A 0.082 0.095
I
D(on)
On-State Drain Current VGS = 4.5 V, VDS = 5 V N-Ch 15 A
VGS = 2.7 V, VDS = 5 V 5
VGS = -4.5 V, VDS = -5 V P-Ch -10
VGS = -2.7 V, VDS = -5 V -3
g
FS
Forward Transconductance VDS = 5 V, ID = 3.8 A N-Ch 15 S
VDS = -5 V, ID = -2.7 A P-Ch 8
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch 700 pF
P-Ch 865
Output Capacitance N-Ch 370 pF
P-Channel
Reverse Transfer Capacitance N-Ch 145 pF
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
P-Ch 415
P-Ch 150
NDH8321C Rev.C1
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
D(on)
r
D(off)
f
Turn - On Delay Time N-Channel
VDD = 5 V, ID = 1 A,
V
= 4.5 V, R
Turn - On Rise Time N-Ch 22 40 ns
GEN
GEN
= 6 Ω
P-Channel
Turn - Off Delay Time N-Ch 48 90 ns
VDD = -5 V, ID = -1 A,
V
= -4.5 V, R
GEN
GEN
= 6 Ω
N-Ch 8 15 ns
P-Ch 11 22
P-Ch 25 50
P-Ch 78 150
Turn - Off Fall Time N-Ch 23 40 ns
P-Ch 55 100
Q
g
Q
gs
Q
gd
Total Gate Charge N-Channel
VDS = 10 V,
ID = 3.8 A, VGS = 4.5 V
N-Ch 19.6 28 nC
P-Ch 16 23
Gate-Source Charge N-Ch 2.5 nC
P-Channel
Gate-Drain Charge N-Ch 6.5 nC
VDS = -10 V,
ID = -2.7 A, VGS = -4.5 V
P-Ch 2.4
P-Ch 5.1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.67 A
P-Ch -0.67
V
SD
Notes:
1. R
by design while R
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A
VGS = 0 V, IS = -0.67 A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
is determined by the user's board design.
CA
θ
(Note2) N-Ch 0.65 1.2 V
(Note2) P-Ch -0.7 -1.2
is guaranteed
JC
θ
T
(t)
P
=
D
R
Typical R
JA
θ
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
T
J−TA
θJ A
for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
J−TA
=
(t)
R
θJ C+RθCA
2
(t)
= I
×R
D
(t)
DS(ON)@T
J
NDH8321C Rev.C1
Typical Electrical Characteristics: N-Channel
20
V = 4.5V
GS
16
12
D
I , DRAIN-SOURCE CURRENT (A)
3.0
2.7
8
4
0
0 0.5 1 1.5 2 2.5 3
2.5
2.0
1.5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. N-Channel On-Region Characteristics.
1.8
I = 3.8A
D
1.6
V = 4.5V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
2
1.8
V = 2.0V
GS
1.6
1.4
1.2
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 4 8 12 16 20
2.5
2.7
3.0
3.5
I , DRAIN CURRENT (A)
D
Figure 2. N-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
2
V = 4.5 V
GS
1.5
1
DS(on)
0.5
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0
0 4 8 12 16 20
T = 125°C
J
25°C
-55°C
I , DRAIN CURRENT (A)
D
4.0
4.5
Figure 3. N-Channel On-Resistance Variation
with Temperature.
15
V = 5V
DS
12
9
6
D
I , DRAIN CURRENT (A)
3
0
0 0.5 1 1.5 2 2.5
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 5. N-Channel Transfer
Characteristics.
Figure 4. N-Channel On-Resistance Variation with Drain
Current and Temperature.
1.3
1.2
1.1
1
0.9
0.8
th
V , NORMALIZED
0.7
0.6
GATE-SOURCE THRESHOLD VOLTAGE
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = V
DS
GS
I = 250µA
D
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDH8321C Rev.C1
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