Fairchild Semiconductor NDH8304P Datasheet
May 1997
NDH8304P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
SuperSOTTM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
-2.7 A, -20 V. R
R
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
= 0.07 Ω @ VGS = -4.5 V
DS(ON)
= 0.095 Ω @ VGS = -2.7 V.
DS(ON)
DS(ON)
.
Absolute Maximum Ratings T
Symbol Parameter
V
DSS
V
GSS
I
D
Drain-Source Voltage -20 V
Gate-Source Voltage ±8 V
Drain Current - Continuous (Note 1) -2.7 A
- Pulsed -10
P
D
TJ,T
Maximum Power Dissipation (Note 1) 0.8 W
Operating and Storage Temperature Range -55 to 150 °C
STG
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
= 25°C unless otherwise noted
A
5
6
7
8
NDH8304P
4
3
2
1
Units
© 1997 Fairchild Semiconductor Corporation
NDH8304P Rev.C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V
Zero Gate Voltage Drain Current
VDS = -16 V, V
GS
= 0 V
TJ= 55°C
-1 µA
-10 µA
Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -8 V, VDS= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage VDS = VGS, ID = - 250 µA -0.4 -0.7 -1 V
TJ= 125°C
-0.3 -0.5 -0.8
Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2.7 A 0.061 0.07
0.087 0.125
0.082 0.095
-10 A
-3
8 S
On-State Drain Current
Forward Transconductance
TJ= 125°C
VGS = -2.7 V, ID = -2.3 A
VGS = -4.5 V, VDS = -5 V
VGS = -2.7 V, VDS = -5 V
VDS = -5 V, ID = -2.7 A
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = -10 V, V
Output Capacitance 415 pF
f = 1.0 MHz
GS
= 0 V,
865 pF
Reverse Transfer Capacitance 150 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 25 50 ns
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, R
GEN
= 6 Ω
Turn - Off Delay Time 78 150 ns
Turn - Off Fall Time 55 100 ns
g
gs
gd
Total Gate Charge
Gate-Source Charge 2.4 nC
Gate-Drain Charge 5.1 nC
VDS = -10 V,
ID = -2.7 A, VGS = -4.5 V
11 22 ns
16 23 nC
NDH8304P Rev.C
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