Fairchild Semiconductor NDP7060L, NDB7060L Datasheet

NDP7060L / NDB7060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

June 1996

These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.

75A, 60V. R

= 0.015Ω @ VGS = 5V

DS(ON)

Low drive requirements allowing operation directly from logic
drivers. V

GS(TH)

< 2.0V.

Critical DC electrical parameters specified at elevated
temperature.

Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.
High density cell design for extremely low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.

________________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP7060L NDB7060L Units

V

DSS

V

DGR

V

GSS

I

D

Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)

60 V

Gate-Source Voltage - Continuous ± 20 V

- Nonrepetitive (tP < 50 µs)

± 40

Drain Current - Continuous 75 A

- Pulsed 225

P

D

Total Power Dissipation @ TC = 25°C 150 W

Derate above 25°C 1 W/°C

TJ,T

Operating and Storage Temperature Range -65 to 175 °C

STG

© 1997 Fairchild Semiconductor Corporation

NDP7060L Rev. B2 / NDB7060L Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

I

AR

Single Pulse Drain-Source Avalanche

DSS

Energy

VDD = 25 V, ID = 75 A 550 mJ

Maximum Drain-Source Avalanche Current 75 A

OFF CHARACTERISTICS

BV
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA
VDS = 60 V, V

GS

= 0 V

TJ = 125°C

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

60 V

250 µA

1 mA

100 nA

ON CHARACTERISTICS (Note 1)

V

R

I
g

D(on)

FS

GS(th)

DS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

TJ = 125°C

Static Drain-Source On-Resistance VGS = 5 V, ID = 37.5 A 0.01 0.015

TJ = 125°C

On-State Drain Current

VGS = 5 V, VDS = 10 V

Forward Transconductance VDS = 10 V, ID = 37.5 A 15 67 S

1 1.3 2 V

0.65 0.8 1.5

Ω

0.016 0.024

75 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 1100 1600 pF
Reverse Transfer Capacitance 310 800 pF

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

4200 4000 pF

SWITCHING CHARACTERISTICS (Note 1)

t
t

t
t

Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = 30 V, ID = 75 A,
Turn - On Rise Time 460 600 nS

VGS = 5 V, R

GEN

= 10Ω

23 40 nS

RGS = 10 Ω

Turn - Off Delay Time 100 150 nS
Turn - Off Fall Time 270 400 nS

Total Gate Charge
Gate-Source Charge 13 nC

VDS = 48 V,
ID = 75 A, VGS = 5 V

86 115 nC

Gate-Drain Charge 62 nC

NDP7060L Rev. B2 / NDB7060L Rev. C